power device 650V 50A Trench Field Stop IGBT luxin-semi YGW50N65T1 for industrial power applications
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Product Description
YGW50N65T1 650V / 50A Trench Field Stop IGBT
The YGW50N65T1 is a high-performance 650V, 50A Trench Field Stop IGBT designed for demanding power applications. It features high breakdown voltage for improved reliability, Trench-Stop Technology for high-speed switching, excellent ruggedness, and a short circuit withstand time of 5s. Its low VCEsat and easy parallel switching capability make it suitable for Uninterruptible Power Supplies, Inverters, Welding Converters, PFC applications, and converters with high switching frequencies.
Product Attributes
- Brand: LU-SEMI
- Product Code: YGW50N65T1
- Package: TO247
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | |||
| DC collector current, limited by Tjmax | IC | TC = 25C | 100 | A | ||
| DC collector current, limited by Tjmax | IC | TC = 100C | 50 | A | ||
| Diode Forward current, limited by Tjmax | IF | TC = 25C | 100 | A | ||
| Diode Forward current, limited by Tjmax | IF | TC = 100C | 50 | A | ||
| Continuous Gate-emitter voltage | VGE | 20 | V | |||
| Transient Gate-emitter voltage | VGE | 30 | V | |||
| Pulse collector current, VGE =15V, tp limited by Tjmax | ICM | 150 | A | |||
| Short Circuit Withstand Time, VGE= 15V, VCE 400V | TSC | 5 | s | |||
| Power dissipation, Tj=25C | Ptot | 312 | W | |||
| Operating junction temperature | Tj | -40 | 175 | C | ||
| Storage temperature | TS | -55 | 175 | C | ||
| Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s | 260 | C | ||||
| Mounting torque, M3 screw | Maximum of mounting processes: 3 M | 0.6 | Nm | |||
| Thermal Resistance | ||||||
| IGBT thermal resistance, junction - case | R(j-c) | 0.48 | K/W | |||
| Diode thermal resistance, junction - case | R(j-c) | 0.8 | K/W | |||
| Thermal resistance, junction - ambient | R(j-a) | 40 | K/W | |||
| Electrical Characteristics (Static) | ||||||
| Collector-Emitter Breakdown Voltage | BVCES | VGE=0V , IC=250uA | 650 | - | - | V |
| Collector-Emitter Breakdown Voltage | BVCES | VGE=0V , IC=1mA | 650 | - | - | V |
| Gate- Emitter Threshold Voltage | VGE(th) | VGE=VCE, IC=250uA | 4.0 | 5.0 | 6.0 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=50A, Tj = 25C | - | - | 1.80 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=50A, Tj = 175C | - | - | 2.30 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tj = 25C | - | 0.1 | - | A |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tj = 175C | - | 40 | - | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - | - | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 50A | - | 30 | - | S |
| Electrical Characteristics (Dynamic) | ||||||
| Input capacitance | Cies | VCE = 30V, VGE = 0V, f = 1MHz | - | 2800 | - | pF |
| Output capacitance | Coes | - | 130 | - | pF | |
| Reverse transfer capacitance | Cres | - | 75 | - | pF | |
| Gate charge | QG | VCC = 520V, IC = 50A, VGE = 15V | - | 180 | - | nC |
| Short circuit collector current | ICSC | VGE=15V,tSC5us, VCC=400V, Tjstart=25C | - | 310 | - | A |
| Switching Characteristics, Inductive Load | ||||||
| Turn-on Delay Time | td(on) | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=25C | - | 40 | - | ns |
| Rise Time | tr | - | 22 | - | ns | |
| Turn-off Delay Time | td(off) | - | 180 | - | ns | |
| Fall Time | tf | - | 88 | - | ns | |
| Turn-on Energy | Eon | - | 1.9 | - | mJ | |
| Turn-off Energy | Eoff | - | 1.1 | - | mJ | |
| Electrical Characteristics of the DIODE | ||||||
| Diode Forward Voltage | VFM | IF = 50A, Tj = 25C | - | 1.9 | - | V |
| Reverse Recovery Time | Trr | IF= 50A, VR = 400V, di/dt= 100A/s, Tj = 25C | - | 20 | - | ns |
| Reverse Recovery Current | Irr | - | 10 | - | A | |
| Reverse Recovery Charge | Qrr | - | 100 | - | nC | |
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