power module luxin-semi LGM100HF120S2F1A 1200V 100A IGBT designed for welding and switching power supplies
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Product Description
Product Overview
The LGM100HF120S2F1A is a 1200V/100A IGBT module designed for high-power applications. It features a VCEsat with a positive temperature coefficient, low switching losses, and a low inductance case. The module utilizes an isolated copper baseplate with DBC technology. It is suitable for applications such as welding machines and switching mode power supplies.
Product Attributes
- Brand: LU-SEMI
- Model: LGM100HF120S2F1A
- Revision: Rev1.0
- Date: 2021.05
Technical Specifications
| Parameter | Conditions | Symbol | Values | Units |
| IGBT, Inverter | ||||
| Collector-emitter voltage | Tvj = 25C | VCES | 1200 | V |
| Continuous DC collector current | TC = 100C, Tvj max = 175C | IC | 100 | A |
| Repetitive peak collector current | tP = 1 ms | ICRM | 200 | A |
| Total power dissipation | TC = 25C, Tvj max = 175C | Ptot | 577 | W |
| Gate-emitter peak voltage | VGES | 20 | V | |
| Collector-emitter saturation voltage | IC = 100A, VGE = 15 V, Tvj = 25C | VCEsat | 1.85 | V |
| Gate threshold voltage | IC = 1.5 mA, VCE = VGE, Tvj = 25C | VGEth | 5.7 | V |
| Gate charge | VGE = -15 / 15 V | QG | 0.7 | C |
| Input capacitance | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V | Cies | 5.8 | nF |
| Reverse transfer capacitance | Cres | 0.21 | nF | |
| Collector-emitter cut-off current | VCE = 1200 V, VGE = 0 V, Tvj = 25C | ICES | 1.0 | mA |
| Gate-emitter leakage current | VCE = 0 V, VGE = 20 V, Tvj = 25C | IGES | 200 | nA |
| Turn-on delay time, inductive load | IC = 100A, VCE = 600 V, VGE = -15 / 15 V, RG = 5.1, Tvj = 25C | td on | 0.24 | s |
| Rise time, inductive load | tr | 0.12 | s | |
| Turn-off delay time, inductive load | td off | 0.32 | s | |
| Fall time, inductive load | tf | 0.18 | s | |
| Turn-on energy loss per pulse | Eon | 9.78 | mJ | |
| Turn-off energy loss per pulse | Eoff | 4.11 | mJ | |
| Thermal resistance, junction to case per IGBT | RthJC | 0.26 | K/W | |
| Thermal resistance, case to heatsink per IGBT | Paste=1 W/(mK) /grease=1 W/(mK) | RthCH | 0.076 | K/W |
| Temperature under switching conditions | Tvj op | -40 to 150 | C | |
| Diode, Inverter | ||||
| Repetitive peak reverse voltage | Tvj = 25C | VRRM | 1200 | V |
| Continuous DC forward current | IF | 100 | A | |
| Repetitive peak forward current | tP = 1 ms | IFRM | 200 | A |
| Forward voltage | IF = 100 A, VGE = 0 V, Tvj = 25C | VF | 1.7 | V |
| Peak reverse recovery current | IF = 100 A, - diF/dt = 2400 A/s, VR = 600 V, VGE = -15 V, RG = 5.1, Tvj = 25C | IRR | 140 | A |
| Recovered charge | QRR | 7 | C | |
| Reverse recovery energy | Erec | 1.75 | mJ | |
| Thermal resistance, junction to case per diode | RthJC | 0.52 | K/W | |
| Thermal resistance, case to heatsink per diode | lPaste = 1 W/(mK) / lgrease = 1 W/(mK) | RthCH | 0.16 | K/W |
| Temperature under switching conditions | Tvj op | -40 to 150 | C | |
| Module | ||||
| Isolation test voltage RMS | f = 50 Hz, t = 1 min. | VISOL | 2.5 | kV |
| Creepage distance terminal to heatsink | 17 | mm | ||
| Creepage distance terminal to terminal | 20 | mm | ||
| Clearance terminal to heatsink | 17 | mm | ||
| Clearance terminal to terminal | 9.5 | mm | ||
| Comperative tracking index | CTI | 200 | ||
| Stray inductance module and fixture | LsCE | 35 | nH | |
| Module lead resistance, terminals - chip | TC = 25C, per switch | RCC'+EE | 0.7 | m |
| Storage temperature | Tstg | -40 to 125 | C | |
| Mountig force per clamp | F | 3 to 5 | N | |
| Weight | G | 164 | g | |
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