1200V 75A trench field stop IGBT luxin-semi YGQ75N120FP for uninterruptible power supplies and solar
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Product Description
Product Overview
The YGQ75N120FP is a 1200V, 75A Trench Field Stop IGBT designed for high-reliability applications. It features Trench-Stop Technology for high-speed switching, excellent ruggedness, temperature stability, and low VCEsat, with easy parallel switching capability. Ideal for Uninterruptible Power Supplies, Solar Inverters, Welding, and PFC applications.
Product Attributes
- Brand: LU-Semi
- Product Package: TO247-PLUS
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Emitter Breakdown Voltage | VCE | 1200 | V | |
| DC collector current, limited by Tjmax | IC | 150 | A | TC = 25C |
| 75 | TC = 100C | |||
| Diode Forward current, limited by Tjmax | IF | 150 | A | TC = 25C |
| 75 | TC = 100C | |||
| Continuous Gate-emitter voltage | VGE | ±20 | V | |
| Transient Gate-emitter voltage | VGE | ±30 | V | |
| Turn off safe operating area | -300 | A | VCE ≤1200V, Tj ≤ 150°C | |
| Pulsed Collector Current, VGE =15V, tp limited by Tjmax | ICM | 300 | A | |
| Diode Pulsed Current, tp limited by Tjmax | IFpuls | 300 | A | |
| Power dissipation, Tj=25°C | Ptot | 735 | W | |
| Max. Junction Temperature (Under switching conditions) | TJmax | 150 | °C | |
| Operating junction temperature | TJop | -40...+150 | °C | |
| Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s | 260 | °C | ||
| IGBT thermal resistance, junction - case | Rθ(j-c) | 0.17 | K/W | |
| Diode thermal resistance, junction - case | Rθ(j-c) | 0.35 | K/W | |
| Thermal resistance, junction - ambient | Rθ(j-a) | 40 | K/W | |
| Static Collector-Emitter breakdown voltage | BVCES | 1200...1300 | V | VGE=0V , IC=250µA |
| Gate threshold voltage | VGE(th) | 5.1 | V | VGE=VCE, IC=250µA |
| Collector-Emitter Saturation voltage | VCE(sat) | 1.62...1.94 | V | VGE=15V, IC=75A, Tj = 25°C |
| VGE=15V, IC=75A, Tj = 150°C | ||||
| Zero gate voltage collector current | ICES | µA | VCE = 1200V, VGE = 0V, Tj = 25°C | |
| VCE = 1200V, VGE = 0V, Tj = 150°C | ||||
| Gate-emitter leakage current | IGES | 100 | nA | VCE = 0V, VGE = ±20V |
| Transconductance | gfs | 67 | S | VCE=20V, IC=75A |
| Input capacitance | Cies | 7655 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Output capacitance | Coes | 351 | pF | |
| Reverse transfer capacitance | Cres | 39.26 | pF | |
| Gate charge | QG | 233.1 | nC | VCC = 960V, IC = 75A, VGE = 15V |
| Turn-on delay time | td(on) | 122 | ns | VCC = 600V, IC = 75A, VGE = ±15V, Rg=6.6Ω, Tj = 25°C |
| Rise time | tr | 89 | ns | VCC = 600V, IC = 75A, VGE = ±15V, Rg=6.6Ω, Tj = 25°C |
| Turn-on energy | Eon | 6.6 | mJ | VCC = 600V, IC = 75A, VGE = ±15V, Rg=6.6Ω, Tj = 25°C |
| Turn-off delay time | td(off) | 171 | ns | VCC = 600V, IC = 75A, VGE = ±15V, Rg=6.6Ω, Tj = 25°C |
| Fall time | tf | 53 | ns | VCC = 600V, IC = 75A, VGE = ±15V, Rg=6.6Ω, Tj = 25°C |
| Turn-off energy | Eoff | 2.9 | mJ | VCC = 600V, IC = 75A, VGE = ±15V, Rg=6.6Ω, Tj = 25°C |
| Diode Forward Voltage | VFM | 2.0 | V | IF = 75A, Tj = 25°C |
| Reverse Recovery Time | Trr | 298 | ns | IF= 75A, VR = 600V, di/dt= 600A/µs, Tj = 25°C |
| Reverse Recovery Current | Irr | 26.6 | A | IF= 75A, VR = 600V, di/dt= 600A/µs, Tj = 25°C |
| Reverse Recovery Charge | Qrr | 4.34 | nC | IF= 75A, VR = 600V, di/dt= 600A/µs, Tj = 25°C |
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Sellina