Luxin Semi YGW10N120T3 1200V 10A IGBT featuring tight parameter distribution and rugged construction

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Product Description

Product Overview

The YGW10N120T3 is a 1200V / 10A Trench Field Stop IGBT designed for high reliability and performance. It features Trench-Stop Technology for tight parameter distribution, high ruggedness, and stable temperature behavior. This IGBT offers a short circuit withstand time of 10s, low VCE(SAT), and easy parallel switching capability due to its positive temperature coefficient in VCE(SAT). It also boasts enhanced avalanche capability.

Product Attributes

Brand: LU-Semi
Product Package: TO247
Packaging: Tube

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
IGBT Electrical Characteristics
Collector-Emitter Breakdown Voltage	BVCES	VGE=0V , IC=250A	1200	-	-	V
Gate threshold voltage	VGE(th)	VGE=VCE, IC=250A	5.2	6	6.8	V
Collector-Emitter Saturation voltage	VCE(sat)	VGE=15V, IC=10A, Tj = 25C	-	1.60	-	V
Collector-Emitter Saturation voltage	VCE(sat)	VGE=15V, IC=10A, Tj = 150C	-	2.0	2.0	V
Zero gate voltage collector current	ICES	VCE = 1200V, VGE = 0V, Tj = 25C	-	-	100	A
Zero gate voltage collector current	ICES	VCE = 1200V, VGE = 0V, Tj = 150C	-	-	1000	A
Gate-emitter leakage current	IGES	VCE = 0V, VGE = 20V	-	-	100	nA
Transconductance	gfs	VCE = 20V, IC = 10A	-	10	-	S
Input capacitance	Cies	VCE = 25V, VGE = 0V, f = 1MHz	-	1720	-	pF
Output capacitance	Coes	VCE = 25V, VGE = 0V, f = 1MHz	-	45	-	pF
Reverse transfer capacitance	Cres	VCE = 25V, VGE = 0V, f = 1MHz	-	25	-	pF
Gate charge	QG	VCC = 960V, IC = 10A, VGE = 15V	-	75	-	nC
IGBT Switching Characteristics (Inductive Load)
Turn-on delay Time	td(on)	VCC = 600V, IC = 10A, VGE = 0/15V, Rg=10, Tj = 25C	-	25	-	ns
Rise Time	tr	VCC = 600V, IC = 10A, VGE = 0/15V, Rg=10, Tj = 25C	-	15	-	ns
Turn-off delay time	td(off)	VCC = 600V, IC = 10A, VGE = 0/15V, Rg=10, Tj = 25C	-	55	-	ns
Fall time	tf	VCC = 600V, IC = 10A, VGE = 0/15V, Rg=10, Tj = 25C	-	240	-	ns
Turn-on Energy	Eon	VCC = 600V, IC = 10A, VGE = 0/15V, Rg=10, Tj = 25C	-	1.25	-	mJ
Turn-off energy	Eoff	VCC = 600V, IC = 10A, VGE = 0/15V, Rg=10, Tj = 25C	-	0.5	-	mJ
DIODE Electrical Characteristics
Diode Forward Voltage	VFM	IF = 10A, Tj = 25C	-	2.3	-	V
Reverse Recovery Time	Trr	IF= 15A, di/dt= 600A/s, Tj = 25C	-	270	-	ns
Reverse Recovery Current	Irr	IF= 15A, di/dt= 600A/s, Tj = 25C	-	10	-	A
Reverse Recovery Charge	Qrr	IF= 15A, di/dt= 600A/s, Tj = 25C	-	1800	-	nC
Maximum Ratings
Collector-Emitter Breakdown Voltage	VCE	-	-	-	1200	V
DC collector current, limited by Tjmax	IC	TC = 25C	-	-	20	A
DC collector current, limited by Tjmax	IC	TC = 100C	-	-	10	A
Diode Forward current, limited by Tjmax	IF	TC = 25C	-	-	20	A
Diode Forward current, limited by Tjmax	IF	TC = 100C	-	-	10	A
Continuous Gate-emitter voltage	VGE	-	-	-	20	V
Transient Gate-emitter voltage	VGE	-	-	-	30	V
Pulsed collector current, VGE= 15V, tp limited by Tjmax	ICM	-	-	-	40	A
Short Circuit Withstand Time, VGE= 15V, VCE 600V	Tsc	-	-	-	10	s
Power dissipation , Tj=25C	Ptot	-	-	-	260	W
Operating junction temperature	Tj	-	-40	-	150	C
Storage temperature	Ts	-	-55	-	150	C
Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s	-	-	-	-	260	C
Thermal Resistance
IGBT thermal resistance, junction - case	R(j-c)	-	-	-	0.69	K/W
Diode thermal resistance, junction - case	R(j-c)	-	-	-	1.5	K/W
Thermal resistance, junction - ambient	R(j-a)	-	-	-	40	K/W