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High Cell Density N Channel MOSFET MATSUKI ME2302 Optimized for Loss in Mobile and Notebook Devices

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The ME2302 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This technology is optimized to minimize on-state resistance, making the device ideal for low-voltage applications such as power management in cellular phones, notebook computers, and other battery-powered circuits. Its low in-line power loss is particularly beneficial for very small outline surface mount packages.

Product Attributes

  • Brand: ME2302
  • Type: N-Channel Enhancement Mode MOSFET
  • Material: Pb-free
  • Package: SOT-23

Technical Specifications

ParameterSymbol5 sec Steady StateTA=25TA=70Unit
Drain-Source VoltageVDSS20V
Gate-Source VoltageVGSS8V
Continuous Drain Current(tJ=150)ID2.82.2A
Pulsed Drain CurrentIDM10A
Maximum Body-Diode Continuous CurrentIS1.6A
Maximum Power DissipationPD1.250.8W
Operating Junction TemperatureTJ150
Thermal Resistance-Junction to AmbientRthJA77105/W
Thermal Resistance-Junction to CaseRJC70/W
SymbolParameterMinTypMaxUnit
V(BR)DSSDrain-Source Breakdown Voltage20V
VGS(th)Gate Threshold Voltage0.60.91.2V
IGSSGate-Body Leakage Current100nA
IDSSZero Gate Voltage Drain Current1A
ID(ON)On-State Drain CurrentA
RDS(ON)Drain-Source On-Resistancem
VSDDiode Forward Voltage0.751.2V
QgTotal Gate Charge9nC
QgsGate-Source Charge2.2
QgdGate-Drain Charge3
CissInput Capacitance350pF
CossOutput Capacitance90
CrssReverse Transfer Capacitance20
td(on)Turn-On Delay Time9ns
trRise Time23
td(off)Turn-Off Delay Time38
tfFall Time

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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