Medium power switching transistor MDD Microdiode Semiconductor MMBT5551-E with SOT-23 package design

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

MMBT5551-E Transistor

The MMBT5551-E is an NPN transistor designed for medium power amplification and switching applications. It offers ideal performance characteristics for these roles.

Product Attributes

Brand: Microdiode
Model: MMBT5551-E
Package: SOT-23
Complementary to: MMBT540

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				180	V
Collector-Emitter Voltage	VCEO				160	V
Emitter-Base Voltage	VEBO				6	V
Collector Current	IC				0.6	A
Collector Power Dissipation	PC	(Ta=25)			0.3	W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
Collector-base breakdown voltage	V(BR)CBO	IC=100A, IE=0			180	V
Collector-emitter breakdown voltage	V(BR)CEO				160	V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A, IC=0			6	V
Collector cut-off current	ICBO	VCB=120V,IE=0			180	nA
Emitter cut-off current	IEBO	VEB=4V,IC=0			300	nA
DC current gain	hFE(1)	VCE=5V, IC=1mA			50
DC current gain	hFE(2)	VCE=5V, IC=10mA			50
DC current gain	hFE(3)	VCE=5V, IC=50mA			50
Collector-emitter saturation voltage	VCE(sat)1	IC=10mA, IB=1mA		0.2		V
Collector-emitter saturation voltage	VCE(sat)2	IC=50mA, IB=5mA		1.1		V
Base-emitter saturation voltage	VBE(sat)1	IC=10mA, IB=1mA		0.75		V
Base-emitter saturation voltage	VBE(sat)2	IC=50mA, IB=5mA		1.1		V
Transition frequency	fT	VCE=5V, IC=10mA,f=30MHz		300		MHz
Collector output capacitance	Cob	VCB=10V, IE=0,f=1MHz			6	pF