MDD Microdiode Semiconductor S8550 SOT23 PNP Transistor with -40 Volt Collector Base Voltage Rating

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Product Description

Product Overview

The S8550 is a PNP type transistor encapsulated in a SOT-23 plastic package. It is a complementary part to the S8050, designed for general-purpose applications with a continuous collector current of -0.5A and a collector power dissipation of 0.3W. The device operates within a junction temperature range of 150 and features a transition frequency of 150MHz.

Product Attributes

Brand: Microdiode (implied by URL)
Package Type: SOT-23
Marking: 2TY

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
VCBO	Collector-Base Voltage				-40	V
VCEO	Collector-Emitter Voltage				-25	V
VEBO	Emitter-Base Voltage				-5	V
IC	Collector Current-Continuous				-0.5	A
PC	Collector Power Dissipation				0.3	W
Tj	Junction Temperature				150
Tstg	Storage Temperature		-55		+150
V(BR)CBO	Collector-base breakdown voltage	IC=-100A, IE=0			-40	V
V(BR)CEO	Collector-emitter breakdown voltage	IC=-1mA,IB=0			-25	V
V(BR)EBO	Emitter-base breakdown voltage	IE=-100A,IC=0			-5	V
ICBO	Collector cut-off current	VCB=-40V, IE=0		-0.1		A
IEBO	Emitter cut-off current	VEB=-3V, IC=0		-0.1		A
hFE(1)	DC current gain	VCE=-1V, IC=-50mA	120		400
VCE(sat)	Collector-emitter saturation voltage	IC=-500mA, IB=-50mA			-0.6	V
VBE(sat)	Base-emitter saturation voltage	IC=-500mA, IB=-50mA			-1.2	V
fT	Transition frequency	VCE=-6V, IC=-20mA f=30MHz		150		MHz
hFE(2)	DC current gain	VCE=-1V, IC=-500mA	50
ICEO	Collector cut-off current	VCB=-20V, IE=0		-0.1		A
RJA	Thermal Resistance From Junction To Ambient			417		/W