MDD Microdiode Semiconductor MMBT4401 NPN transistor for switching and signal amplification circuits

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Product Description

Product Overview

The MMBT4401 is a general-purpose NPN switching transistor designed for various electronic applications. It offers reliable performance with key electrical characteristics suitable for signal amplification and switching circuits.

Product Attributes

Brand: microdiode
Package Type: SOT-23

Technical Specifications

Symbol	Parameter	Test conditions	Min	Typ	Max	Unit
VCEO	Collector-Emitter Voltage				40	V
VCBO	Collector-Base Voltage				60	V
VEBO	Emitter-Base Voltage				6	V
IC	Collector Current -Continuous				600	mA
PC	Collector Power dissipation				0.3	W
Tj	Junction Temperature			150
Tstg	Storage Temperature		-55		+150
RJA	Thermal Resistance, junction to Ambient			417		/mW
V(BR)CEO	Collector-emitter breakdown voltage	IC = 1 mA, IB = 0			40	V
V(BR)CBO	Collector-base breakdown voltage	IC = 100uA, IE = 0			60	V
V(BR)EBO	Emitter-base breakdown voltage	IE = 100uA, IC = 0			6	V
ICBO	Collector cut-off current	VCB = 50V, IE = 0			40	uA
IEBO	Emitter cut-off current	VEB = 5V, IC =0			0.1	uA
hFE1	DC current gain	VCE = 1V, IC = 150mA			250
hFE2	DC current gain	VCE = 10V, IC = 20mA, f=100MHz		300
hFE3	DC current gain	IC = 150mA, IB = 15mA			1.2
hFE4	DC current gain	IC = 500mA, IB = 50mA			0.75
hFE5	DC current gain	VCE = 1V, IC=1mA			80
VCE(sat)	Collector-emitter saturation voltage	IC = 150mA, IB = 15mA		0.4		V
VBE(sat)	Base-emitter saturation voltage	IC = 150mA, IB = 15mA		0.1		V
tr	Rise time	VCC = 30V, IC = 150mA IB1=IB2=15mA		20		ns
td	Delay time	VCC = 30V, IC = 150mA IB1=IB2=15mA		225		ns
ts	Storage time	VCC = 30V, IC = 150mA IB1=IB2=15mA		60		ns
tf	Fall time	VCC = 30V, IC = 150mA IB1=IB2=15mA			0.1	us
fT	Transition frequency	VCE = 30V, VEB =0.4V		150		MHZ
Cib	Capacitance	VCE = 1V, IC=1mA			20	pF
Cob	Capacitance	VCE = 1V, IC=0.1mA			250	pF