MDD Microdiode Semiconductor MMBT5551 NPN transistor ideal for medium power amplification switching

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Product Description

Product Overview

The MMBT5551 is an NPN transistor in a SOT-23 plastic-encapsulated package. It is complementary to the MMBT5401 and is ideal for medium power amplification and switching applications.

Product Attributes

Brand: Microdiode
Package: SOT-23
Marking: G1

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				180	V
Collector-Emitter Voltage	VCEO				160	V
Emitter-Base Voltage	VEBO	IE=10A, IC=0			6	V
Collector Current	IC				0.6	A
Collector Power Dissipation	PC	Ta=25			0.3	W
Thermal Resistance (Junction to Ambient)	RJA			416	/W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
Collector-Base Breakdown Voltage	V(BR)CBO	IC=100A, IE=0			180	V
Collector-Emitter Breakdown Voltage	V(BR)CEO				160	V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE=10A, IC=0			6	V
Collector Cut-off Current	ICBO	VCB=120V, IE=0			180	nA
Emitter Cut-off Current	IEBO	VEB=4V, IC=0			50	nA
DC Current Gain (Rank L)	hFE(1)	VCE=5V, IC=1mA	100		200
DC Current Gain (Rank H)	hFE(2)	VCE=5V, IC=10mA	200		300
DC Current Gain	hFE(3)	VCE=5V, IC=50mA		300
Collector-Emitter Saturation Voltage	VCE(sat)1	IC=10mA, IB=1mA		0.15		V
Collector-Emitter Saturation Voltage	VCE(sat)2	IC=50mA, IB=5mA		0.2		V
Base-Emitter Saturation Voltage	VBE(sat)1	IC=10mA, IB=1mA		1		V
Base-Emitter Saturation Voltage	VBE(sat)2	IC=50mA, IB=5mA		1		V
Transition Frequency	fT	VCE=10V, IC=10mA,f=30MHz		100		MHz
Collector Output Capacitance	Cob	VCB=10V, IE=0,f=1MHz		6		pF