Microdiode Semiconductor MMBT5401T PNP Transistor SOT523 Package Complementary to MMBT5551T Medium Power

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Product Description

Product Overview

The MMBT5401T is a PNP bipolar transistor in a SOT-523 plastic-encapsulated package. It is complementary to the MMBT5551T and is ideal for medium power amplification and switching applications. Its small surface mount package makes it suitable for various electronic designs.

Product Attributes

Brand: Microdiode
Package Type: SOT-523
Transistor Type: PNP
Complementary to: MMBT5551T
Marking: 2L

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Breakdown Voltage	V(BR)CBO	IC =-100A, IE=0	-160			V
	V(BR)CEO	IC =-1mA, IB=0	-150			V
	V(BR)EBO	EI =-10A, IC=0	-5			V
Cut-off Current	ICBO	CB V =-120V, IE=0			-160	nA
Cut-off Current	IEBO	EB V =-3V, IC=0			-50	nA
DC Current Gain	hFE(1)	VCE=-5V, IC=-1mA	50
	hFE(2)	VCE=-5V, IC=-10mA		100
	hFE(3)	VCE=-5V, IC=-50mA		50
Saturation Voltage	VCE(sat)1	IC=-10mA, IB=-1mA		-0.2	-0.5	V
Saturation Voltage	VCE(sat)2	IC=-50mA, IB=-5mA		-1	-1	V
Base-Emitter Saturation Voltage	VBE(sat)1	IC=-10mA, IB=-1mA		-0.2	-0.5	V
Base-Emitter Saturation Voltage	VBE(sat)2	IC=-50mA, IB=-5mA		-1	-1	V
Transition Frequency	fT	CE V =-10V,IC=-10mA, f=100MHz		100		MHz
Collector Output Capacitance	Cob	CB V =-10V, IE=0,f=1MHz		6		pF

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	-160	V
VCEO	Collector-Emitter Voltage	-150	V
VEBO	Emitter-Base Voltage	-5	V
IC	Collector Current	-0.6	A
PC	Collector Power Dissipation	0.15	W
RJA	Thermal Resistance Junction To Ambient	833	/W
Tj	Junction Temperature	150
Tstg	Storage Temperature	-55+150