PNP Plastic Encapsulate Transistor MCC MMBT5401HE3-TP with Collector Current 600mA and Voltage Rating 150V

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Product Description

Product Overview

The MMBT5401HE3 is a 1/4 PNP Plastic Encapsulate Transistor from MCCSEMI.COM. It is designed for general-purpose applications and features AEC-Q101 qualification, Halogen-Free "Green" device compliance, and RoHS compliance. This transistor offers a collector current of up to -600 mA and a collector-emitter voltage of up to -150 V, making it suitable for various electronic circuits.

Product Attributes

Brand: MCCSEMI.COM
Device Type: PNP Plastic Encapsulate Transistor
Marking: Halogen Free. "Green" Device
Certifications: AEC-Q101 Qualified, UL 94 V-0 Flammability Rating, RoHS Compliant
Moisture Sensitivity Level: 1

Technical Specifications

Parameter	Symbol	Rating	Unit	Conditions
Collector Current	IC	-600	mA
Collector Power Dissipation	PC	300	mW
Collector-Emitter Voltage	VCEO	-150	V
Emitter-Base Voltage	VEBO	-5	V
Collector-Base Voltage	VCBO	-160	V
Operating Junction Temperature Range		-55 to +150
Storage Temperature Range		-55 to +150
Thermal Resistance Junction to Ambient		417	/W
Emitter-Base Cutoff Current	IEBO	-100	nA	VEB=-4V, IC=0
Transition Frequency	fT	100	MHz	VCE=-5V, IC=-50mA, IB=-5mA, f=30MHz
Base-Emitter Saturation Voltage	VBE(sat)	-1.0	V	IC=-50mA, IB=-5mA
Collector-Emitter Saturation Voltage	VCE(sat)	-0.5	V	IC=-50mA, IB=-5mA
DC Current Gain	hFE1	100		VCE=-5V, IC=-1.0mA
DC Current Gain	hFE2	300		VCE=-5V, IC=-10mA
DC Current Gain	hFE3	80		VCE=-5V, IC=-50mA
Collector Cutoff Current	ICBO	-50	nA	VCB=-120V, IE=0
Emitter-Base Breakdown Voltage	V(BR)EBO	-5	V	IE=-10A, IC=0
Collector-Emitter Breakdown Voltage	V(BR)CEO	-150	V	IC=-1mA, IB=0
Collector-Base Breakdown Voltage	V(BR)CBO	-160	V	IC=-100A, IE=0