IGBT transistor luxin-semi YGW75N65HP 650V 75A trench field stop for high speed switching applications
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Product Description
Product Overview
The YGW75N65HP is a 650V / 75A Trench Field Stop IGBT designed for high-speed switching applications. It offers high breakdown voltage for improved reliability, enhanced ruggedness with temperature stability, a short circuit withstand time of 5s, low VCEsat, and easy parallel switching capability due to a positive temperature coefficient in VCEsat. This IGBT is suitable for demanding applications such as Uninterruptible Power Supplies, Inverters, Welding Converters, PFC applications, and converters with high switching frequencies.
Product Attributes
- Brand: lu-semi
- Product Code: YGW75N65HP
- Package: TO247
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | VGE=0V , IC=250uA |
| (BVCES) | ||||
| Gate Threshold Voltage | VGE(th) | 4.2 | V | VGE=VCE, IC=250uA |
| (Min) | 5.2 | V | Typ | |
| 6.2 | V | Max | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.65 | V | VGE=15V, IC=75A, Tj = 25C |
| (Typ) | 2.20 | V | Tj = 175C | |
| 2.10 | V | Max | ||
| Zero Gate Voltage Collector Current | ICES | 3 | A | VCE = 650V, VGE = 0V, Tj = 25C |
| (Typ) | 100 | A | Tj = 175C | |
| 5000 | A | Max | ||
| Gate-Emitter Leakage Current | IGES | 200 | nA | VCE = 0V, VGE = 20V |
| Transconductance | gfs | 40 | S | VCE = 20V, IC = 75A |
| Input Capacitance | Cies | 4700 | pF | VCE = 25V, VGE = 0V, f = 100KHz |
| Output Capacitance | Coes | 430 | pF | |
| Reverse Transfer Capacitance | Cres | 30 | pF | |
| Gate Charge | QG | 145 | nC | VCC = 520V, IC = 75A, VGE = 15V |
| Turn-on Delay Time | td(on) | 50 | ns | VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=10, Tj=25C |
| Rise Time | tr | 120 | ns | |
| Turn-off Delay Time | td(off) | 150 | ns | |
| Fall Time | tf | 75 | ns | |
| Turn-on Energy | Eon | 2.70 | mJ | |
| Turn-off Energy | Eoff | 2.10 | mJ | |
| Diode Forward Voltage | VFM | 1.6 | V | IF = 75A, Tj = 25C |
| Reverse Recovery Time | Trr | 50 | ns | IF= 75A, VR = 400V, di/dt= 100A/s, Tj = 25C |
| Reverse Recovery Current | Irr | 10 | A | |
| Reverse Recovery Charge | Qrr | 100 | nC | |
| DC Collector Current | IC | 75 | A | TC = 100C |
| (Limited by Tjmax) | ||||
| Diode Forward Current | IF | 75 | A | TC = 100C |
| (Limited by Tjmax) | ||||
| Continuous Gate-Emitter Voltage | VGE | 20 | V | |
| Transient Gate-Emitter Voltage | VGE | 30 | V | |
| Pulse Collector Current | ICM | 225 | A | VGE =15V, tp limited by Tjmax |
| Short Circuit Withstand Time | TSC | 5 | s | VGE= 15V, VCE 400V |
| Power Dissipation | Ptot | 375 | W | Tj=25C |
| Operating Junction Temperature | Tj | -40...+175 | C | |
| Storage Temperature | TS | -55...+175 | C | |
| Soldering Temperature | 260 | C | wave soldering, 1.6mm from case for 10s | |
| Mounting Torque | M | 0.6 | Nm | M3 screw |
| IGBT Thermal Resistance (junction-case) | R(j-c) | 0.40 | K/W | |
| Diode Thermal Resistance (junction-case) | R(j-c) | 0.8 | K/W | |
| Thermal Resistance (junction-ambient) | R(j-a) | 40 | K/W |
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Sellina