Medium Power Amplifier Transistor MCC MMBTA05-TP NPN Small Signal Switching Epitaxial Planar Die

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Product Description

Product Overview

The MMBTA05 and MMBTA06 are NPN small signal general purpose amplifier transistors designed for medium power amplification and switching applications. These epitaxial planar die construction transistors are halogen-free, moisture sensitivity level 1, and meet UL 94 V-0 flammability rating. They are lead-free and RoHS compliant.

Product Attributes

Brand: MCCSEMI.COM
Construction: Epitaxial Planar Die
Certifications: Halogen Free. "Green" Device, Moisture Sensitivity Level 1, Epoxy Meets UL 94 V-0 Flammability Rating, Lead Free Finish/RoHS Compliant

Technical Specifications

Parameter	Symbol	Rating	Unit	Conditions
Collector-Base Voltage	VCBO	80	V
Collector-Emitter Voltage	VCEO	80	V
Emitter-Base Voltage	VEBO	4	V
Continuous Collector Current	IC	500	mA	@ 25C Unless Otherwise Specified
Power Dissipation	PD	300	mW
Operating Junction Temperature Range		-55 to +150
Storage Temperature Range		-55 to +150
Thermal Resistance		417	/W	Junction to Ambient
Collector-Base Breakdown Voltage	V(BR)CBO	80	V	IC=100A, IE=0
Collector-Emitter Breakdown Voltage	V(BR)CEO	80	V	IC=1mA, IB=0
Emitter-Base Breakdown Voltage	V(BR)EBO	4	V	IE=100A, IC=0
Collector Cutoff Current	ICBO	0.1	A	VCB=60V, IE=0
Collector Cutoff Current	ICEO	0.1	A	VCE=60V, IB=0
Emitter Cutoff Current	IEBO	0.1	A	VEB=3V, IC=0
Collector-Emitter Saturation Voltage	VCE(sat)	0.25	V	IC=100mA, IB=10mA
Collector-Emitter Saturation Voltage	VCE(sat)	1.2	V	IC=100mA, IB=10mA
Base-Emitter Saturation Voltage	VBE(sat)	1.2	V	IC=10mA, IB=1mA
DC Current Gain	hFE(1)	100-400		VCE=1V, IC=10mA
DC Current Gain	hFE(2)	100		VCE=1V, IC=100mA, IB=10mA
Transition Frequency	fT	100	MHz	VCE=2V, IC=10mA, f=100MHz