Silicon Plastic Encapsulated MCC MMSS8550-H-TP Transistor with RoHS Compliance and High Current Gain

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Product Description

Product Overview

The MMSS8550-L and MMSS8550-H are PNP silicon plastic-encapsulated transistors designed for switching and AF amplifier applications. These devices are halogen-free, moisture sensitivity level 1, and meet UL 94 V-0 flammability rating. They are lead-free and RoHS compliant.

Product Attributes

Brand: MCCSEMI.COM
Material: Silicon Plastic-Encapsulate
Certifications: Halogen Free, Moisture Sensitivity Level 1, UL 94 V-0 Flammability Rating, Lead Free Finish/RoHS Compliant

Technical Specifications

Parameter	Symbol	MMSS8550-L	MMSS8550-H	Conditions	Units
Collector-Base Voltage	VCBO	-40			V
Collector-Emitter Voltage	VCEO	-25			V
Emitter-Base Voltage	VEBO	-5			V
Collector Current	IC	-1.5			A
Power Dissipation	PD	300			mW
Thermal Resistance		417		Junction to Ambient	/W
DC Current Gain (hFE(1))	hFE(1)	120-200	200-350	VCE=-1V, IC=-10mA
DC Current Gain (hFE(2))	hFE(2)	40-120		VCE=-1V, IC=-800mA
Collector-Emitter Cutoff Current	ICEO	-100		VCE=-20V, IB=0	nA
Emitter-Base Cutoff Current	IEBO	-100		VEB =-5V, IC=0	nA
Collector-Base Cutoff Current	ICBO	-100		VCB=-40V, IE=0	nA
Transition Frequency	fT	100		VCE=-10V, IC=-50mA, f=30MHz	MHz
Base-Emitter Voltage	VBE	-1.2		VCE=-1V, IC=-800mA, IB=-80mA	V
Collector-Emitter Saturation Voltage	VCE(sat)	-0.5		VCE=-1V, IC=-10mA	V
Emitter-Base Breakdown Voltage	V(BR)EBO	-5		IE=-100A, IC=0	V
Collector-Base Breakdown Voltage	V(BR)CBO	-40		IC=-100A, IE=0	V
Collector-Emitter Breakdown Voltage	V(BR)CEO	-25		IC=-100A, IB=0	V
Operating Junction Temperature Range		-55 to +150
Storage Temperature Range		-55 to +150