NPN Silicon Planar Transistor MCC FMMT618 TP with 0.5 Amp Base Current and RoHS Compliant Lead Free Finish
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Product Description
FMMT618 NPN Silicon Planar High Performance Transistor
The FMMT618 is a high-performance NPN silicon planar transistor designed for various applications. It features a continuous base current of 0.5 A and a continuous collector current of 2.5 A, with a maximum power dissipation of 350 mW. This device is Halogen Free, "Green" compliant, and meets UL 94 V-0 flammability rating. It is suitable for use in applications requiring reliable and efficient transistor performance.
Product Attributes
- Brand: MCCSEMI.COM
- Type: NPN Silicon Planar High Performance Transistor
- Certifications: Halogen Free, "Green" Device, Moisture Sensitivity Level 1, Epoxy Meets UL 94 V-0 Flammability Rating, Lead Free Finish/RoHS Compliant
- Operating Temperature Range: -55 to +150
- Storage Temperature Range: -55 to +150
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
| Collector-Emitter Voltage | VCEO | 20 | V | @ 25C Unless Otherwise Specified |
| Emitter-Base Voltage | VEBO | 5 | V | @ 25C Unless Otherwise Specified |
| Continuous Collector Current | IC | 2.5 | A | @ 25C Unless Otherwise Specified |
| Power Dissipation | PD | 350 | mW | @ 25C Unless Otherwise Specified |
| Continuous Base Current | IB | 0.5 | A | @ 25C Unless Otherwise Specified |
| Collector-Base Voltage | VCBO | 20 | V | @ 25C Unless Otherwise Specified |
| Thermal Resistance | Rth(j-a) | 357 | /W | Junction to Ambient |
| Collector-Base Cutoff Current | ICBO | 0.1 | A | VCB=16V, IE=0 |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.0 | V | IC=2.5A, IB=50mA |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.15 | V | IC=1A, IB=10mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.20 | V | IC=2.5A, IB=50mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.15 | V | IC=1A, IB=10mA |
| Turn-on Time | ton | 170 | ns | VCC=10V, IC=1A, IB1=-IB2=10mA |
| Turn-off Time | toff | 400 | ns | VCC=10V, IC=1A, IB1=-IB2=10mA |
| DC Current Gain | hFE | 200 | - | VCE=2V, IC=2A |
| DC Current Gain | hFE | 100 | - | VCE=2V, IC=4A |
| Collector-Base Breakdown Voltage | V(BR)CBO | 20 | V | IC=100A, IE=0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | V | IE=100A, IC=0 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 20 | V | IC=10mA, IB=0 |
| Emitter-Base Cutoff Current | IEBO | 0.1 | A | VEB=4V, IC=0 |
| Base-Emitter Voltage | VBE | 1.0 | V | VCE=2V, IC=200mA |
| Base-Emitter Voltage | VBE | 0.15 | V | VCE=2V, IC=2.5A |
| Transition Frequency | fT | 100 | MHz | VCE=10V,IC=50mA,f=100MHz |
| Output Capacitance | Cob | 30 | pF | VCE=2V, IC=10mA, f=1MHz |
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