MCC MMST2222A TP NPN Plastic Encapsulate Transistor Ideal for General Purpose Electronic Applications

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

NPN Plastic Encapsulate Transistors MMST2222A

The MMST2222A is an NPN plastic encapsulated transistor designed for general-purpose applications. It features an ultra-small surface mount package, making it suitable for space-constrained designs. This device is Halogen Free and RoHS Compliant, indicating an environmentally conscious product. Its epoxy meets UL 94 V-0 flammability rating, ensuring safety in various applications. The MMST2222A is ideal for use in applications requiring a compact and reliable NPN transistor.

Product Attributes

Brand: MCCSEMI.COM
Material: Plastic Encapsulate
Certifications: Halogen Free. Green Device, Moisture Sensitivity Level 1, Epoxy Meets UL 94 V-0 Flammability Rating, Lead Free Finish/RoHS Compliant

Technical Specifications

Parameter	Symbol	Rating	Unit	Conditions
Maximum Collector Current	ICM	0.6	A
Collector Power Dissipation	PC	200	mW
Collector-Emitter Voltage	VCEO	40	V
Emitter-Base Voltage	VEBO	6	V
Collector-Base Voltage	VCBO	75	V
Operating Junction Temperature Range		-55 to +150
Storage Temperature Range		-55 to +150
Collector-Base Cutoff Current	ICEX	10	nA	VCE=60V,VBE=3V
Collector Cutoff Current		100	nA	VCB=70V,IE=0
Emitter Cutoff Current	IEBO	100	nA	VEB=3V,IC=0
DC Current Gain (hFE1)	hFE1	50		VCE=10V, IC=1mA
DC Current Gain (hFE2)	hFE2	100 - 300		VCE=10V, IC=150mA
Collector-Emitter Saturation Voltage	VCE(sat)	0.6	V	VCE=10V, IC=150mA
Base-Emitter Saturation Voltage	VBE(sat)	0.6 - 1.2	V	IC=500mA, IB=50mA
Rise Time	tr	25	ns	VCC=30V, VBE(off)=0.5V IC=150mA, IB1=15mA
Delay Time	td	10	ns	VCC=30V, VBE(off)=0.5V IC=150mA, IB1=15mA
Storage Time	ts	225	ns	VCC=30V, VBE(off)=0.5V IC=150mA, IB1=15mA
Fall Time	tf	60	ns	VCC=30V, VBE(off)=0.5V IC=150mA, IB1=15mA
Transition Frequency	fT	300	MHz	IC=500mA, IB=50mA
Output Capacitance	Cob	8	pF	VCB=10V, IE=0, f=1MHz
Collector-Emitter Breakdown Voltage	V(BR)CEO	40	V	IC=10mA, IB=0
Collector-Base Breakdown Voltage	V(BR)CBO	75	V	IC=10A, IE=0
Emitter-Base Breakdown Voltage	V(BR)EBO	6	V	IE=10A, IC=0