High Speed Switching Field Stop IGBT MagnaChip Semicon MBQ40T65QESTH with Halogen Free Certification

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The Magnachip MBQ40T65QES is a 650V Field Stop IGBT designed for high-speed switching and low power loss. Leveraging Magnachip's advanced Field Stop Trench IGBT Technology, this device offers excellent quality and performance. It is suitable for applications such as inverters, welding converters, and high-range switching frequency converters.

Product Attributes

Brand: Magnachip Semiconductor Ltd.
Technology: Field Stop Trench IGBT
Package: TO-247
Certifications: Halogen Free
Date: Jul. 2021
Version: 1.2

Technical Specifications

Parameter	Symbol	Conditions	Rating	Unit
Maximum Rating
Collector-emitter voltage	VCE		650	V
DC collector current, limited by Tvjmax	IC	TC=25C	80	A
DC collector current, limited by Tvjmax	IC	TC=100C	40	A
Pulsed collector current, tp limited by Tvjmax	ICpuls		120	A
Diode forward current limited by Tvjmax	IF	TC=25C	40	A
Diode forward current limited by Tvjmax	IF	TC=100C	20
Diode pulsed current, tp limited by Tvjmax	IFpuls		120	A
Gate-emitter voltage	VGE		20	V
Power dissipation	PD	TC=25C	230	W
Power dissipation	PD	TC=100C	115	W
Operating Junction temperature range	Tvj		-40~175	C
Storage temperature range	Tstg		-55~150	C
Thermal Characteristic
Thermal resistance junction-to-ambient	RJA		40	C/W
Thermal resistance junction-to-case for IGBT	RJC		0.65
Thermal resistance junction-to-case for Diode	RJC		1.75
Features
High Speed Switching & Low Power Loss	VCE(sat)	@ IC = 40A	1.8	V
Maximum junction temperature			175	C
Electrical Characteristic (Tvj = 25C unless otherwise specified)
Collector-emitter breakdown voltage	BVCES	IC = 2mA, VGE = 0V	650	V
Collector-emitter saturation voltage	VCE(sat)	IC = 40A, VGE= 15V, Tvj = 25C	- 2.3	V
Collector-emitter saturation voltage	VCE(sat)	IC = 40A, VGE= 15V, Tvj = 175C	- 2.3
Diode forward voltage	VF	VGE = 0V, IF = 20A, Tvj = 25C	- 1.95	V
Diode forward voltage	VF	VGE = 0V, IF = 20A, Tvj = 175C	- 1.5
Gate-emitter threshold voltage	VGE(th)	VCE = VGE, IC = 40mA	3.5 - 6.5	V
Zero gate voltage collector current	ICES	VCE = 650V, VGE = 0V, Tvj = 25C	- 40	A
Gate-emitter leakage current	IGES	VGE = 20V, VCE = 0V	- 100	nA
Dynamic Characteristic
Total gate charge	Qg	VCE = 520V, IC = 40A, VGE = 15V	- 60	nC
Gate-emitter charge	Qge		- 13
Gate-collector charge	Qgc		- 25
Input capacitance	Cies	VCE = 25V, VGE = 0V, f = 1MHz	- 1565	pF
Reverse transfer capacitance	Cres		- 37
Output capacitance	Coes		- 120
Switching Characteristic (Tvj = 25C)
Turn-on delay time	td(on)	VGE = 15V, VCC = 400V, IC = 40A, RG = 10, Inductive Load	- 6	ns
Rise time	tr		- 36
Turn-off delay time	td(off)		- 55
Fall time	tf		- 64
Turn-on switching energy	Eon		- 0.5	mJ
Turn-off switching energy	Eoff		- 0.4	mJ
Total switching energy	Ets		- 0.9	mJ
Switching Characteristic (Tvj = 175C)
Turn-on delay time	td(on)	VGE = 15V, VCC = 400V, IC = 40A, RG = 10, Inductive Load	- 7	ns
Rise time	tr		- 41
Turn-off delay time	td(off)		- 60
Fall time	tf		- 102
Turn-on switching energy	Eon		- 1.04	mJ
Turn-off switching energy	Eoff		- 0.57	mJ
Total switching energy	Ets		- 1.61	mJ
Diode Characteristic (Tvj = 25C)
Reverse recovery time	trr	IF = 20A, diF/dt = 820A/ s	- 60	ns
Reverse recovery current	Irr		- 18	A
Reverse recovery charge	Qrr		- 696	nC
Diode Characteristic (Tvj = 175C)
Reverse recovery time	trr	IF = 20A, diF/dt = 820A/ s	- 72	ns
Reverse recovery current	Irr		- 22	A
Reverse recovery charge	Qrr		- 864	nC
Ordering Information
Part Number	Marking	Temp. Range	Package	Packing
MBQ40T65QESTH	40T65QES	-55~150C	TO-247	Tube
Physical Dimension
Dimension	Min(mm)	Max(mm)
A	4.70	5.31
A1	2.20	2.60
A2	1.50	2.49
b	0.99	1.40
b1	2.59	3.43
b2	1.65	2.39
c	0.38	0.89
D	20.30	21.46
D1	13.08	-
E	15.45	16.26
E1	13.06	14.02
E2	4.32	5.49
e	5.45BSC
L	19.81	20.57
L1	-	4.50
P	3.50	3.70
Q	5.38	6.20
S	6.15BSC