Silicon Carbide Schottky Diode MICROCHIP MSC010SDA120K 1200 Volt 10 Amp TO220 Package for Power Applications
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Product Description
Microsemi MSC010SDA120K Zero Recovery Silicon Carbide Schottky Diode
The MSC010SDA120K is a 1200 V, 10 A Silicon Carbide (SiC) Schottky Barrier Diode (SBD) in a two-lead TO-220 package. It offers increased performance and lower total cost of ownership over silicon diode solutions for high-voltage applications. Key features include low forward voltage, low leakage current, no reverse recovery current/no forward recovery, and avalanche energy rating. Benefits include higher reliability systems, minimized heat sink requirements, and higher efficiency. Applications include H/EV powertrain, EV chargers, power supplies, PV inverters, industrial motor drives, smart grid transmission and distribution, and aviation.
Product Attributes
- Brand: Microsemi
- Material: Silicon Carbide (SiC)
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Ratings | Unit | Test Conditions |
| Maximum DC reverse voltage | VR | 1200 | V | |
| Maximum peak repetitive reverse voltage | VRRM | V | ||
| Maximum working peak reverse voltage | VRWM | V | ||
| Maximum DC forward current | IF | 27 | A | TC = 25 C |
| Maximum DC forward current | IF | 13 | A | TC = 135 C |
| Maximum DC forward current | IF | 11 | A | TC = 145 C |
| Repetitive peak forward surge current | IFRM | 38 | A | TC = 25 C, tp = 8.3 ms, half sine wave |
| Non-repetitive forward surge current | IFSM | 75 | A | TC = 25 C, tp = 8.3 ms, half sine wave |
| Power dissipation | Ptot | 136 | W | TC = 25 C |
| Power dissipation | Ptot | 59 | W | TC = 110 C |
| Operating junction and storage temperature range | TJ, TSTG | 55 to 175 | C | |
| Lead temperature for 10 Seconds | TL | 300 | C | |
| Single pulse avalanche energy | EAS | 100 | mJ | Starting TJ = 25 C, L = 2.0 mH, peak IL = 10 A |
| Junction-to-case thermal resistance | RJC | 0.67 | C/W | |
| Junction-to-case thermal resistance | RJC | 1.1 | C/W | |
| Package weight | WT | 1.9 | g | |
| Maximum mounting torque | Torque | 0.7 | N-m | |
| Forward voltage | VF | 1.5 | V | IF = 10 A, TJ = 25 C |
| Forward voltage | VF | 1.8 | V | IF = 10 A, TJ = 25 C |
| Forward voltage | VF | 2.1 | V | IF = 10 A, TJ = 175 C |
| Reverse leakage current | IRM | 3 | A | VR = 1200 V, TJ = 25 C |
| Reverse leakage current | IRM | 200 | A | VR = 1200 V, TJ = 25 C |
| Reverse leakage current | IRM | 50 | A | VR = 1200 V, TJ = 175 C |
| Total capacitive charge | QC | 48 | nC | VR = 600 V, TJ = 25 C |
| Junction capacitance | CJ | 55 | pF | VR = 400 V, TJ = 25 C, = 1 MHz |
| Junction capacitance | CJ | 43 | pF | VR = 800 V, TJ = 25 C, = 1 MHz |
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