MCC MMBT4401TP General Purpose NPN Transistor with 0.1A Collector Cutoff Current and RoHS Compliance
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Delivery Time:
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Product Description
Product Overview
The MMBT4401 is an NPN general-purpose amplifier housed in a SOT-23 package. It is designed for various amplification applications and offers features such as a maximum power dissipation of 350mW and a continuous collector current (Ic) of 600mA. This component is available in lead-free and RoHS-compliant versions, with a halogen-free option. It operates within a wide temperature range and meets flammability rating standards.
Product Attributes
- Brand: Micro Commercial Components (MCC)
- Package: SOT-23
- Certifications: RoHS Compliant, Halogen Free available
- Flammability Rating: Epoxy meets UL 94 V-0
- Moisture Sensitivity Level: 1
- Marking: 2X/M4A
Technical Specifications
| Parameter | Min | Max | Units | Conditions |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | 40 | Vdc | IC=1.0mAdc, IB=0 | |
| Collector-Base Breakdown Voltage (V(BR)CBO) | 60 | Vdc | IC=10mAdc, IE=0 | |
| Emitter-Base Breakdown Voltage (V(BR)EBO) | 6.0 | Vdc | IE=0.1mAdc, IC=0 | |
| Base Cutoff Current (IBL) | 0.1 | Adc | VCE=35Vdc, VBE=0.4Vdc | |
| Collector Cutoff Current (ICEX) | 0.1 | Adc | VCE=35Vdc, VBE=0.4Vdc | |
| DC Current Gain (hFE) | 20 | IC=0.1mAdc, VCE=1.0Vdc | ||
| DC Current Gain (hFE) | 40 | IC=1.0mAdc, VCE=1.0Vdc | ||
| DC Current Gain (hFE) | 80 | IC=10mAdc, VCE=1.0Vdc | ||
| DC Current Gain (hFE) | 100 | IC=150mAdc, VCE=1.0Vdc | ||
| DC Current Gain (hFE) | 300 | IC=500mAdc, VCE=1.0Vdc | ||
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.4 | Vdc | IC=150mAdc, IB=15mAdc | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.75 | Vdc | IC=500mAdc, IB=50mAdc | |
| Base-Emitter Saturation Voltage (VBE(sat)) | 0.75 | Vdc | IC=150mAdc, IB=15mAdc | |
| Base-Emitter Saturation Voltage (VBE(sat)) | 0.95 | Vdc | IC=500mAdc, IB=50mAdc | |
| Base-Emitter Saturation Voltage (VBE(sat)) | 1.2 | Vdc | ||
| Current Gain-Bandwidth Product (fT) | 250 | MHz | IC=20mAdc, VCE=10Vdc, f=100MHz | |
| Collector-Base Capacitance (Ccb) | 6.5 | pF | VCB=5.0Vdc, IE=0, f=1.0MHz | |
| Emitter-Base Capacitance (Ceb) | 30.0 | pF | VBE=0.5Vdc, IC=0, f=1.0MHz | |
| Delay Time (td) | 15 | ns | VCC=30Vdc, VBE=0.2Vdc, IC=150mAdc, IB1=15mAdc | |
| Rise Time (tr) | 20 | ns | VCC=30Vdc, VBE=0.2Vdc, IC=150mAdc, IB1=15mAdc | |
| Storage Time (ts) | 225 | ns | VCC=30Vdc, IC=150mAdc, IB1=IB2=15mAdc | |
| Fall Time (tf) | 30 | ns | VCC=30Vdc, IC=150mAdc, IB1=IB2=15mAdc | |
| Power Dissipation (PD(MAX)) | 350 | mWatts | ||
| Continuous Collector Current (Ic) | 600 | mA | ||
| Operating Junction Temperature | -55 | 150 | C | |
| Storage Junction Temperature | -55 | 150 | C | |
| Thermal Resistance Junction to Ambient | 357 | C/W |
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