NPN Plastic Encapsulated Transistor MCC BC846BHE3 TP Lead Free RoHS Compliant AEC Q101 Qualification

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Product Description

Product Overview

The BC846AHE3 thru BC848CHE3 series are NPN plastic-encapsulated transistors designed for general-purpose applications. They feature AEC-Q101 qualification, Halogen-Free "Green" device compliance, and meet UL 94 V-0 flammability rating. These transistors are lead-free and RoHS compliant, suitable for various electronic circuits requiring reliable switching and amplification.

Product Attributes

Brand: MCCSEMI
Certifications: AEC-Q101 Qualified, UL 94 V-0 Flammability Rating
Material: Plastic Encapsulate
Features: Halogen Free. "Green" Device, Moisture Sensitivity Level 1, Lead Free Finish/RoHS Compliant

Technical Specifications

Parameter	Symbol	BC846AHE3-BC846BHE3	BC847AHE3-BC847CHE3	BC848AHE3-BC848CHE3	Conditions	Min	Typ	Max	Unit
Collector Current	IC	100			@ 25C Unless Otherwise Specified			100	mA
Collector Power Dissipation	PC				@ 25C Unless Otherwise Specified			225	mW
Collector-Emitter Voltage	VCEO				@ 25C Unless Otherwise Specified			65	V
Emitter-Base Voltage	VEBO				@ 25C Unless Otherwise Specified			6	V
Collector-Base Voltage	VCBO				@ 25C Unless Otherwise Specified			80	V
Operating Junction Temperature Range						-55		+150
Storage Temperature Range						-55		+150
Maximum Thermal Resistance					Junction to Ambient			556	/W
Collector Cut-off Current	ICBO				VCB=70V, IE=0			0.1	A
Collector Cut-off Current	ICBO				VCB=50V, IE=0			0.1	A
Collector Cut-off Current	ICBO				VCB=30V, IE=0			0.1	A
Emitter Cutoff Current	IEBO				VEB=5V, IC=0			0.1	A
Collector-Emitter Breakdown Voltage	V(BR)CEO				IC=10mA, IB=0	65			V
Collector-Emitter Breakdown Voltage	V(BR)CEO				IC=10mA, IB=0	45			V
Collector-Emitter Breakdown Voltage	V(BR)CEO				IC=10mA, IB=0	30			V
Collector-Base Breakdown Voltage	V(BR)CBO				IE=10A, IC=0	80			V
Emitter-Base Breakdown Voltage	V(BR)EBO				IC=10A, IE=0	6			V
DC Current Gain	hFE	200-450	420-800		IC=10mA, VCE=5V
DC Current Gain	hFE			420-800	IC=10mA, VCE=5V
DC Current Gain	hFE	200-450			IC=100mA, VCE=5V
DC Current Gain	hFE		420-800		IC=100mA, VCE=5V
DC Current Gain	hFE			420-800	IC=100mA, VCE=5V
DC Current Gain	hFE	200-450			IC=100mA, VCE=5V
DC Current Gain	hFE		420-800		IC=100mA, VCE=5V
DC Current Gain	hFE			420-800	IC=100mA, VCE=5V
Collector-Emitter Saturation Voltage	VCE(sat)				IC=100mA, IB=5mA		0.25	0.7	V
Collector-Emitter Saturation Voltage	VCE(sat)				IC=10mA, IB=0.5mA		0.1	0.5	V
Base-Emitter Saturation Voltage	VBE(sat)				IC=10mA, IB=0.5mA		0.7	1.1	V
Transition Frequency	fT				IC=10mA, VCE=5V	100			MHz
Transition Frequency	fT				IC=10mA, VCE=5V		100		MHz
Transition Frequency	fT				IC=10mA, VCE=5V		110		MHz
Transition Frequency	fT				IC=10mA, VCE=5V		220		MHz
Collector Output Capacitance	Cob				VCB=10V, IE=0, f=0.1MHz			4.5	pF