MSC050SDA120B Silicon Carbide Schottky Barrier Diode 1200 Volt 50 Amp for Industrial Power Systems
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Product Description
Product Overview
The Microsemi MSC050SDA120B is a 1200 V, 50 A Silicon Carbide (SiC) Schottky Barrier Diode (SBD) designed to enhance performance and reduce the total cost of ownership for high-voltage applications. It offers higher reliability systems, minimizes heat sink requirements, and provides higher efficiency. Key features include low forward voltage, low leakage current, no reverse recovery current, no forward recovery, and avalanche energy rating. This device is ideal for H/EV powertrain, EV chargers, power supplies, PV inverters, industrial motor drives, smart grid transmission and distribution, and aviation applications.
Product Attributes
- Brand: Microsemi
- Material: Silicon Carbide (SiC)
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Ratings | Unit | Conditions |
| Maximum DC reverse voltage | VR | 1200 | V | |
| Maximum peak repetitive reverse voltage | VRRM | |||
| Maximum working peak reverse voltage | VRWM | |||
| Maximum DC forward current | IF | 109 | A | T = 25 C |
| 49 | A | T = 135 C | ||
| 41 | A | T = 145 C | ||
| Repetitive peak forward surge current | IFRM | 154 | A | T = 25 C, t = 8.3 ms, half sine wave |
| Non-repetitive forward surge current | IFSM | 290 | A | T = 25 C, t = 8.3 ms, half sine wave |
| Power dissipation | Ptot | 429 | W | T = 25 C |
| 186 | W | T = 110 C | ||
| Operating junction and storage temperature range | TJ, TSTG | 55 to 175 | C | |
| Lead temperature for 10 seconds | TL | 300 | C | |
| Single-pulse avalanche energy | EAS | 100 | mJ | T = 25 C, L = 0.08 mH, I = 50 A |
| Junction-to-case thermal resistance | RJC | 0.24 - 0.35 | C/W | |
| Package weight | WT | 5.9 | g | |
| Maximum mounting torque | Torque | 1.1 | N-m | |
| Forward voltage | VF | 1.5 - 1.8 | V | I = 50 A, T = 25 C |
| 2.1 | V | I = 50 A, T = 175 C | ||
| Reverse leakage current | IRM | 15 - 200 | A | V = 1200 V, T = 25 C |
| 250 | A | V = 1200 V, T = 175 C | ||
| Total capacitive charge | QC | 224 | nC | V = 600 V, T = 25 C |
| Junction capacitance | CJ | 246 | pF | V = 400 V, T = 25 C, = 1 MHz |
| 182 | pF | V = 800 V, T = 25 C, = 1 MHz |
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