fast recovery surface mount rectifier diode MICROCHIP 1N5617US suitable for high voltage applications
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MOQ:
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Delivery Time:
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Product Description
Product Overview
This series of fast recovery surface mount rectifier diodes, military qualified to MIL-PRF-19500/429, is designed for high-reliability applications. Featuring hermetically sealed, voidless-glass construction with an internal "Category I" metallurgical bond, these 1.0 Amp rectifiers offer working peak reverse voltages from 200 to 1000 Volts. They are suitable for general rectifier applications, including bridges, half-bridges, and catch diodes, offering high forward surge capability and robust construction.
Product Attributes
- Brand: Microsemi
- Division: Scottsdale Division
- Construction: Voidless-glass, hermetically sealed
- Bonding: Internal "Category I" Metallurgical bonds
- Passivation: Triple-Layer
- Certifications: Military qualified to MIL-PRF-19500/429 (JAN, JANTX, JANTXV, and JANS available)
- Package: Surface mount (equivalent to JEDEC 1N5615 to 1N5623 series), also available in axial-leaded configurations. Package "A" or D-5A.
- Terminations: End caps are Copper with Tin/Lead (Sn/Pb) finish.
- Marking & Polarity: Cathode band only
- Radiation Hardness: Inherently radiation hard
Technical Specifications
| Part Number | Working Peak Reverse Voltage (VRWM) (Volts) | Average Rectified Current (IO) @ TA=55C (Amps) | Forward Voltage (VF) @ 3A (Max.) (Volts) | Reverse Current (IR) @ VRWM (Max.) (A) | Capacitance (C) @ VR=12V, f=1MHz (Max.) (pF) | Reverse Recovery (trr) (Max.) (ns) |
| 1N5615US | 200 | 1.00 | 1.6 | 0.5 | 25 | 150 |
| 1N5617US | 400 | 1.00 | 1.6 | 0.5 | 25 | 150 |
| 1N5619US | 600 | 1.00 | 1.6 | 0.5 | 25 | 150 |
| 1N5621US | 800 | 1.00 | 1.6 | 0.5 | 25 | 150 |
| 1N5623US | 1000 | 1.00 | 1.6 | 0.5 | 25 | 150 |
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