Small Signal Complementary Transistor Pair MCC MMDT3946-TP NPN and PNP in Halogen Free SOT-363 Package

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Product Description

Product Overview

The MMDT3946 is a complementary pair of NPN and PNP small signal surface mount transistors, ideal for low power amplification and switching applications. Featuring epitaxial planar die construction and a SOT-363 package, these devices are Halogen Free, "Green", Moisture Sensitivity Level 1, and RoHS Compliant.

Product Attributes

Brand: MCCSEMI
Package: SOT-363
Construction: Epitaxial Planar Die
Certifications: Halogen Free. Green Device, Moisture Sensitivity Level 1, Epoxy Meets UL 94 V-0 Flammability Rating, Lead Free Finish/RoHS Compliant

Technical Specifications

Parameter	Symbol	NPN Rating	NPN Unit	NPN Conditions	PNP Rating	PNP Unit	PNP Conditions
Power Dissipation	PD	200	mW		200	mW
Thermal Resistance Junction to Ambient	RJA	625	C/W		625	C/W
Collector-Emitter Voltage	VCEO	40	V		-40	V
Emitter-Base Voltage	VEBO	-5	V		-5	V
Collector-Base Voltage	VCBO	-40	V		-60	V
Continuous Collector Current	IC	-200	mA		200	mA
Collector Cutoff Current	ICEO / ICBO	50 / 50	nA	VCE=40V, IB=0 / VCB=30V, IE=0	-50 / -50	nA	VEB=5V, IC=0 / VCB=-30V, IE=0
Emitter Cutoff Current	IEBO	50	nA	VEB=5V, IC=0	-50	nA	VEB=-5V, IC=0
DC Current Gain	hFE	40 (1), 70 (2), 100-300 (3), 60 (4), 30 (5)		IC=1mA, IB=0 / IC=1mA, IB=0 / IC=10mA, IB=1mA / IC=20mA, IB=1mA / IC=50mA, IB=5mA	40 (1), 70 (2), 100-300 (3), 60 (4), 30 (5)		IC=-0.1mA, IB=0 / IC=-1mA, IB=0 / IC=-10mA, IB=-1mA / IC=-20mA, IB=-1mA / IC=-50mA, IB=-5mA
Collector-Emitter Saturation Voltage	VCE(sat)	0.2 (typ) / 0.3 (typ)	V	VCE=1V, IC=1mA / VCE=1V, IC=10mA	-0.25 (typ) / -0.4 (typ)	V	VCE=-1V, IC=-10mA / VCE=-1V, IC=-50mA
Base-Emitter Saturation Voltage	VBE(sat)	0.65-0.85 (typ) / 0.95 (typ)	V	IC=10mA, IB=1mA / IC=50mA, IB=5mA	-0.65 -0.85 (typ) / -0.95 (typ)	V	IC=-10mA, IB=-1mA / IC=-50mA, IB=-5mA
Transition Frequency	fT	300	MHz	VCE=20V, IC=20mA, f=100MHz	250	MHz	VCE=-20V, IC=-10mA, f=100MHz
Delay Time	td	35	ns	VCC=3V, IC=10mA, VBE=0.5V, IB1=1mA	35	ns	VCC=-3V, IC=-10mA, VBE=-0.5V, IB1=-1mA
Rise Time	tr	35	ns	VCC=3V, IC=10mA, IB1=IB2=1mA	35	ns	VCC=-3V, IC=-10mA, IB1=IB2=-1mA
Storage Time	ts	50	ns	VCB=5V, IE=0, f=1MHz	225	ns	VCC=-3V, IC=-10mA, IB1=-IB2=-1mA
Fall Time	tf	0.95	V	VCE=1V, IC=50mA	75	ns	VCE=-1V, IC=-50mA
Output Capacitance	Cob	4	pF	VCE=1V, IC=0.1mA, f=1KHz	4.5	pF	VCB=-5V, IE=0, f=1MHz
Noise Figure	NF	3	dB	VCE=5V,IC=0.1mA,f=1KHz,Rs=1K	4	dB	VCE=-5V,IC=-0.1mA,f=1KHz,Rs=1K
Collector-Base Breakdown Voltage	V(BR)CBO	60	V	IC=10A, IE=0	-40	V	IC=-10A, IE=0
Collector-Emitter Breakdown Voltage	V(BR)CEO	40	V	IC=1mA, IB=0	-40	V	IC=-1mA, IB=0
Emitter-Base Breakdown Voltage	V(BR)EBO	6	V	IE=10A, IC=0	-6	V	IE=-10A, IC=0