RoHS Compliant Silicon Carbide Diode MICROCHIP MSC030SDA070BCT for High Switching Frequency Circuits
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Product Description
Product Overview
The MSC030SDA070B is a Zero Recovery Silicon Carbide Schottky Diode designed for high-frequency applications. It offers no reverse or forward recovery, low forward voltage, and low leakage current, contributing to high switching frequencies, reduced switching losses, and lower electromagnetic interference (EMI). Its avalanche energy rating and RoHS compliance ensure higher reliability systems and increased power density. This diode is ideal for power factor correction (PFC), anti-parallel diode configurations, switch-mode power supplies, inverters/converters, motor controllers, and as a freewheeling or snubber/clamp diode.
Product Attributes
- Brand: Microsemi
- Material: Silicon Carbide
- Certifications: RoHS compliant
Technical Specifications
| Symbol | Parameter | Ratings | Unit | Conditions |
| VR | Maximum DC reverse voltage | 700 | V | |
| VRRM | Maximum peak repetitive reverse voltage | 700 | V | |
| VRWM | Maximum working peak reverse voltage | 700 | V | |
| IF | Maximum DC forward current | 60 | A | T = 25 C |
| IF | Maximum DC forward current | 25 | A | T = 135 C |
| IF | Maximum DC forward current | 21 | A | T = 145 C |
| IFRM | Repetitive peak forward surge current | 79 | A | T = 25 C, t = 8.3 ms, half sine wave |
| IFSM | Non-repetitive forward surge current | 146 | A | T = 25 C, t = 8.3 ms, half sine wave |
| Ptot | Power dissipation | 188 | W | T = 25 C |
| Ptot | Power dissipation | 81 | W | T = 110 C |
| Tj, Tstg | Operating junction and storage temperature range | 55 to 175 | C | |
| TL | Lead temperature for 10 seconds | 300 | C | |
| EAS | Single pulse avalanche energy | 100 | mJ | starting T = 25 C, L = 0.22 mH, peak I = 30 A |
| RJC | Junction-to-case thermal resistance | 0.56 - 0.80 | C/W | |
| Wt | Package weight | 6.2 | g | |
| Mounting torque, 6-32 or M3 screw | 1.1 | N-m | ||
| VF | Forward voltage | 1.5 - 1.8 | V | I = 30 A, T = 25 C |
| VF | Forward voltage | 1.75 | V | I = 30 A, T = 175 C |
| IRM | Reverse leakage current | 1 - 200 | A | V = 700 V, T = 25 C |
| IRM | Reverse leakage current | 10 | A | V = 700 V, T = 175 C |
| Qc | Total capacitive charge | 83 | nC | V = 400 V, T = 25 C |
| Cj | Junction capacitance | 1200 | pF | V = 1 V, T = 25 C, = 1 MHz |
| Cj | Junction capacitance | 150 | pF | V = 200 V, T = 25 C, = 1 MHz |
| Cj | Junction capacitance | 128 | pF | V = 400 V, T = 25 C, = 1 MHz |
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