Epitaxial planar die small signal transistor MCC BCW68G-TP with lead free and RoHS compliant features
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The BCW68G is a PNP epitaxial planar die construction small signal transistor ideally suited for automatic insertion. It offers low current and low voltage capabilities, making it suitable for various electronic applications. This device is halogen-free, "Green", moisture sensitivity level 1, and meets UL 94 V-0 flammability rating. It is lead-free and RoHS compliant.
Product Attributes
- Brand: MCCSEMI
- Construction: Epitaxial Planar Die
- Certifications: UL 94 V-0 Flammability Rating, RoHS Compliant
- Environmental: Halogen Free. "Green" Device, Moisture Sensitivity Level 1
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
| Peak Collector Current | ICM | -1000 | mA | Valid Provided that Leads are Kept at Ambient Temperature |
| Continuous Base Current | IB | -100 | mA | TS=79C |
| Peak Base Current | IBM | -200 | mA | TS=79C |
| Collector-Base Voltage | VCBO | -60 | V | @ 25C Unless Otherwise Specified |
| Collector-Emitter Voltage | VCEO | -45 | V | @ 25C Unless Otherwise Specified |
| Emitter-Base Voltage | VEBO | -5 | V | @ 25C Unless Otherwise Specified |
| Continuous Collector Current | IC | -800 | mA | 330 mW PD |
| Operating Junction Temperature Range | -55 to +150 | |||
| Storage Temperature Range | -55 to +150 | |||
| Thermal Resistance Junction to Ambient | 285 | /W | ||
| Thermal Resistance Junction to Soldering Point | 215 | /W | ||
| Collector-Base Cutoff Current | ICBO | -20 | nA | VCB=-45V, IE=0 |
| Base-Emitter Saturation Voltage | VBE(sat) | -1.25 | V | IC=-100mA, IB=-10mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.7 | V | IC=-500mA, IB=-50mA |
| Emitter-Base Capacitance | CEB | 60 | pF | VEB=-0.5V, f=1MHz |
| Collector-Base Capacitance | CCB | 6 | pF | VCB=-10V, f=1MHz |
| DC Current Gain | hFE(1) | 50 | VCE=-1V, IC=-10mA | |
| DC Current Gain | hFE(2) | 120 | VCE=-5V,IC=-50mA,f=100MHz | |
| DC Current Gain | hFE(3) | 160-400 | VCE=-1V, IC=-100mA | |
| DC Current Gain | hFE(4) | 60 | VCE=-2V, IC=-500mA | |
| Emitter-Base Cutoff Current | IEBO | -20 | A | VCE=-45V, IE=0, TA=150C |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -45 | V | IC=-10mA, IB=0 |
| Collector-Base Breakdown Voltage | V(BR)CBO | -60 | V | IE=-10A, IC=0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IC=0, IB=0 |
| Transition Frequency | fT | 200 | MHz | VCE=-5V,IC=-50mA,f=100MHz |
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Sellina