PNP transistor MCC MMDT3906V-TP with plastic encapsulation epoxy UL 94 V0 rating and amplification
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Product Description
Product Overview
The MMDT3906V is a PNP plastic encapsulated transistor designed for low power amplification and switching applications. It features a lead-free finish and is RoHS compliant, with a moisture sensitivity level of 1 and an epoxy flammability rating of UL 94 V-0. The device offers a wide operating and storage temperature range from -55 to +150 and has a typical thermal resistance of 833/W (Junction to Ambient).
Product Attributes
- Brand: MCCSEMI
- Marking: KAR
- Lead Free Finish/RoHS Compliant
- Moisture Sensitivity Level: 1
- Epoxy Meets UL 94 V-0 Flammability Rating
- Halogen Free Available Upon Request (By Adding Suffix "-HF")
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| DC Current Gain | hFE(1) | 60 | VCE=-1V, IC=-0.1mA | |||
| hFE(2) | 80 | VCE=-1V, IC=-0.1mA | ||||
| hFE(3) | 100 | 300 | VCE=-1V, IC=-1mA | |||
| hFE(4) | 60 | VCE=-1V, IC=-50mA | ||||
| hFE(5) | 30 | VCE=-1V, IC=-100mA | ||||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.25 | V | IC=-10mA, IB=-1mA | ||
| VCE(sat) | -0.4 | V | IC=-50mA, IB=-5mA | |||
| Base-Emitter Saturation Voltage | VBE(sat) | -0.65 | -0.85 | V | IC=-10mA, IB=-1mA | |
| VBE(sat) | -0.95 | V | IC=-50mA, IB=-5mA | |||
| Base Cutoff Current | IBL | -50 | nA | IE=-10A, IC=0 | ||
| Collector Cutoff Current | ICEX | -50 | nA | VCE=-30V, VEB(OFF)=-3V | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IC=-10A, IE=0 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -40 | V | IC=-1mA, IB=0 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | -40 | V | IC=-1mA, IB=0 | ||
| Transition Frequency | fT | 250 | MHz | IC=-10mA, IB=-1mA | ||
| Output Capacitance | Cob | 4.5 | pF | VCB=-5V, IE=0, f=1MHz | ||
| Noise Figure | NF | 4 | dB | VCE=-5V, IC=-0.1mA RS=1K, f=1KHz | ||
| Switching Times | Delay Time | td | 35 | ns | VCC=-3V, IC=-10mA VBE(OFF)=-0.5V, IB1=IB2=-1mA | |
| Rise Time | tr | 35 | ns | VCC=-3V, IC=-10mA VBE(OFF)=-0.5V, IB1=IB2=-1mA | ||
| Storage Time | ts | 225 | ns | VCC=-3V, IC=-10mA IB1=IB2=-1mA | ||
| Fall Time | tf | 75 | ns | VCC=-3V, IC=-10mA IB1=IB2=-1mA |
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