MCC MMBT2222AT TP NPN General Purpose Transistor with 150mW Power Dissipation and Epoxy Construction

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Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The MMBT2222AT is an NPN General Purpose Amplifier with capabilities for 150mWatts of Power Dissipation. It operates within a junction temperature range of -55C to 150C and can handle a collector current of 0.6A.

Product Attributes

Brand: MCC (Micro Commercial Components)
Certifications: RoHS Compliant (indicated by "P" suffix), UL 94 V-0 flammability rating
Material: Epoxy
Origin: USA (implied by address)
Halogen Free: Available upon request (by adding "-HF" suffix)

Technical Specifications

Symbol	Parameter	Min	Max	Units	Conditions
OFF CHARACTERISTICS
V(BR)CEO	Collector-Emitter Breakdown Voltage*	40		Vdc	(IC=10mAdc, IB=0)
V(BR)CBO	Collector-Base Breakdown Voltage	75		Vdc	(IC=10PAdc, IE=0)
V(BR)EBO	Emitter-Base Breakdown Voltage	6.0		Vdc	(IE=10PAdc, IC=0)
ICBO	Collector Cut-off Current		100	nAdc	(VCB=70Vdc, IE=0)
ICEO	Collector Cutoff Current		100	nAdc	(VCE=35Vdc, IB=0)
IEBO	Emitter Cut-off Current		100	nAdc	(VEB=3Vdc, IC=0)
ON CHARACTERISTICS
hFE	DC Current Gain*	35	300		(IC=0.1mAdc, VCE=10Vdc) to (IC=500mAdc, VCE=10Vdc)
VCE(sat)	Collector-Emitter Saturation Voltage	0.3	1.0	Vdc	(IC=150mAdc, IB=15mAdc) to (IC=500mAdc, IB=50mAdc)
VBE(sat)	Base-Emitter Saturation Voltage	1.2	2.0	Vdc	(IC=150mAdc, IB=15mAdc) to (IC=500mAdc, IB=50mAdc)
SMALL-SIGNAL CHARACTERISTICS
fT	Current Gain-Bandwidth Product	300		MHz	(IC=20mAdc, VCE=20Vdc, f=100MHz)
Cobo	Output Capacitance		8.0	pF	(VCB=10Vdec, IE=0, f=100kHz)
SWITCHING CHARACTERISTICS
td	Delay Time		10	ns
tr	Rise Time		25	ns	(VCC=30Vdc, VBE=0.5Vdc IC=150mAdc, IB1=15mAdc)
ts	Storage Time		225	ns
tf	Fall Time		60	ns	(VCC=30Vdc, IC=150mAdc IB1=IB2=15mAdc)