High power application Minos E13009L MNS fast switch with excellent current gain and switching speed
Price:
Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
This high-voltage fast switch is designed for high-power applications. It offers robust performance with specific voltage and current ratings suitable for demanding switching tasks. The device is characterized by its high current gain and fast switching times, making it ideal for power electronics circuits.
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Origin: Shenzhen Minos (derived from contact information)
- Package Type: TO-3P
Technical Specifications
| Parameter | Symbol | Description | Min | Typical | Max | Unit | Test Conditions |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | |||||||
| Storage Temperature | Tstg | -65 | 150 | ||||
| Junction Temperature | Tj | 150 | |||||
| Collector Power Dissipation (Tc=25 ) | PC | 100 | W | ||||
| Collector-Base Voltage | VCBO | 700 | V | ||||
| Collector-Emitter Voltage | VCEO | 400 | V | ||||
| Emitter-Base Voltage | VEBO | 9 | V | ||||
| Collector Current (DC) | IC | 12 | A | ||||
| Base Current | IB | 6 | A | ||||
| Electrical Characteristics (Ta=25) | |||||||
| Collector-Emitter Breakdown Voltage | BVCEO | 400 | V | IC=10mA, IB=0 | |||
| Emitter-Base Cutoff Current | IEBO | 1 | mA | VEB=9V, IC=0 | |||
| DC Current Gain | HFE(1) | 8 | 40 | VCE=5V, IC=3A | |||
| DC Current Gain | HFE(2) | 6 | 30 | VCE=5V, IC=5A | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 1 | V | IC=5A, IB=1A | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.5 | V | IC=8A, IB=1.6A | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 3 | V | IC=12A, IB=3A | |||
| Base-Emitter Saturation Voltage | VBE(sat) | 1.2 | V | IC=5A, IB=1A | |||
| Base-Emitter Saturation Voltage | VBE(sat) | 1.6 | V | IC=8A, IB=1.6A | |||
| Common-Base Output Capacitance | Cob | 180 | pF | VCB=10Vf=0.1MHz | |||
| Characteristic Frequency | fT | 4 | MHz | VCE=10VIC=0.5A | |||
| Turn-on Time | tON | 1.1 | S | Vcc=125V,Ic=8A | |||
| Storage Time | tSTG | 3.0 | S | IB1=IB2=1.6A | |||
| Fall Time | tF | 0.7 | S | ||||
| Pinout (TO-3P) | |||||||
| Pin 1 | B | Base | |||||
| Pin 2 | C | Collector | |||||
| Pin 3 | E | Emitter | |||||
Notes:
- Exceeding the maximum ratings of the device may cause permanent failure and affect dependability. Design circuits to avoid exceeding absolute maximum ratings.
- When installing a heat sink, pay attention to torsional moment and smoothness.
- MOSFETs are sensitive to static electricity; protect the device from static discharge during use.
- Shenzhen Minos reserves the right to make changes to this specification sheet without prior notice.
Contact:
Shenzhen Minos Technology Co., Ltd. (Headquarters)
Address: 22B-22C, Tianmian City Building, 4026 Shennan Middle Road, Tianmian Community, Huafu Street, Futian District, Shenzhen
Postal Code: 518025
Phone: 0755-83273777
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