TO220 packaged transistor Minos MJE3055T ideal for audio power amplification and high current handling

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Product Description

Product Overview

The MJE3055T is a transistor designed for audio power amplification. It is manufactured by Shenzhen Minos.

Product Attributes

Brand: MNS
Model: MJE3055T
Package Type: TO-220

Technical Specifications

Parameter	Symbol	Description	Minimum	Typical	Maximum	Unit	Test Conditions
Storage Temperature	Tstg		-55		150
Junction Temperature	Tj				150
Collector Power Dissipation	PC	(Tc=25)			65	W
Collector Power Dissipation	PC	(TA=25)			2	W
Collector-Base Voltage	VCBO				100	V
Collector-Emitter Voltage	VCEO				100	V
Emitter-Base Voltage	VEBO				5	V
Collector Current	IC				6	A
Base Current	IB				2	A
Collector-Emitter Cutoff Current	ICEO				1.5	mA	VCE=60V, IB=0
Collector-Base Cutoff Current	IEBO				2.0	mA	VEB=5V, IC=0
Collector-Emitter Saturation Current	ICES				100	A	VCE=100V, VEB=0
DC Current Gain	hFE(1)		30				VCE=4V, IC=0.3A
DC Current Gain	hFE(2)				100		VCE=4V, IC=3A
Collector-Emitter Saturation Voltage	VCE(sat)			1.5		V	IC=6A, IB=600mA
Base-Emitter On Voltage	VBE(on)			2.0		V	VCE=4V, IC=6A
Collector-Emitter Breakdown Voltage	BVCEO		400			V	IC=30mA, IB=0
Characteristic Frequency	fT			80		MHz	VCE=10V, IC=500mA, f=1MHz

Pinout: 1-Base (B), 2-Collector (C), 3-Emitter (E)

Notes:

Exceeding the maximum ratings may cause device damage or permanent failure.
When installing a heat sink, pay attention to torsional moment and smoothness.
MOSFETs are sensitive to static electricity and require protection during use.
Shenzhen Minos reserves the right to make changes to this specification sheet without prior notice.

Contact:

Shenzhen Minos Technology Co., Ltd. (Headquarters)
Address: 22B-22C, Tianmian City Building, No. 4026 Shennan Middle Road, Tianmian Community, Huafu Street, Futian District, Shenzhen
Postal Code: 518025
Phone: 0755-83273777