80A Forward Current Soft Recovery Diode Minos F80UP40DN for High Frequency Power Conditioning and Snubber Circuits

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

This FRD Ultrafast Soft Recovery Diode, 80A is optimized for reduced losses and EMI/RFI in high-frequency power conditioning systems. Its soft recovery behavior serves as a snubber in many applications, making it ideal for HF welding power converters and other scenarios where switching losses are not a significant factor.

Product Attributes

Brand: MNS-KX
Origin: Shenzhen Minos (implied from contact information)

Technical Specifications

Parameter	Symbol	Test Conditions	Values	Units
Repetitive peak reverse voltage	VRRM		400	V
Continuous forward current	IF(AV)	Tc =110C	80	A
Single pulse forward current	IFSM	Tc =25C	600
Maximum repetitive forward current	IFRM	Square wave, 20kHZ	160
Operating junction	Tj		175	C
Storage temperatures	Tstg		-55 to +175	C
Breakdown voltage	VBR, VR	IR=100A	400	V
Forward voltage (Per Diode)	VF	IF=40A	1.20 - 1.60
Forward voltage (Per Diode)	VF	IF=40A, Tj =125C	1.10 - 1.40
Reverse leakage current(Per Diode)	IR	VR= VRRM	30	A
Reverse leakage current(Per Diode)	IR	Tj=150C, VR=400V	300
Reverse recovery time(Per Diode)	trr	IF=0.5A, IR=1A, IRR=0.25A	26 - 55	ns
Reverse recovery time(Per Diode)	trr	IF=1A,VR=30V, di/dt =200A/us	26 - 40	ns
Junction-to-Case	RJC		0.8	/W

Features

Ultrafast Recovery
175C operating junction temperature
High frequency operation
Low power loss, less RFI and EMI
Low IR value
High surge capacity
Epitaxial chip construction

Package Description: TO-3P

Symbol	Dimensions(millimeter)
Min.	Max.
A	4.60	5.00
A1	1.30	1.70
A2	2.20	2.60
b	0.80	1.20
b1	2.90	3.30
b2	1.90	2.30
c	0.40	0.80
e	5.25	5.65
E	15.3	15.7
E1	13.2	13.6
E2	13.1	13.5
E3	9.10	9.50
H	19.7	20.1
H1	19.1	20.1
H2	18.3	18.7
H3	2.80	3.20
G	4.80	5.20
P	3.00	3.40