Ultrafast soft recovery diodes Minos 60F30 optimized for reduced losses and improved EMI performance

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Product Description

Product Overview

These ultrafast soft recovery diodes are optimized for reduced losses and improved EMI/RFI performance in high-frequency power conditioning systems. Their soft recovery characteristic often eliminates the need for a snubber circuit. Ideal for applications like HF welding power converters where switching losses are not a primary concern.

Product Attributes

Brand: MNS-KX
Origin: Shenzhen, China

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ.	Max.	Units
Repetitive peak reverse voltage	VRRM				300	V
					Continuous forward current	IF(AV)	Tc =110C		60	A
					Single pulse forward current	IFSM	Tc =25C		600	A
Maximum repetitive forward current	IFRM	Square wave, 20kHZ			150	A
Operating junction temperature	Tj				175	C
Storage temperatures	Tstg		-55		+175	C
Breakdown voltage / Blocking voltage	VBR, VR	IR=100A			300	V
Breakdown voltage / Blocking voltage	VBR, VR	IR=100A			Forward voltage (Per Diode)	VF	IF=40A	0.96	1.20	V
Forward voltage (Per Diode)	VF	IF=40A, Tj=125C		0.85	1.00	V
Reverse leakage current (Per Diode)	IR	VR= VRRM			10	A
Reverse leakage current (Per Diode)	IR	Tj=150C, VR=400V			100	A
Reverse recovery time (Per Diode)	trr	IF=0.5A, IR=1A, IRR=0.25A			35	45	ns
Reverse recovery time (Per Diode)	trr	IF=1A,VR=30V, di/dt =200A/us		26	32	ns
Junction-to-Case Thermal Resistance	RJC			0.8	2.0	/W

Package Description

TO-3P PACKAGE

Symbol	Dimensionsmm	Min.	Max.
A		4.60	5.00
A1		1.30	1.70
A2		2.20	2.60
b		0.80	1.20
b1		2.90	3.30
b2		1.90	2.30
c		0.40	0.80
e		5.25	5.65
E		15.3	15.7
E1		13.2	13.6
E2		13.1	13.5
E3		9.10	9.50
H		19.7	20.1
H1		19.1	20.1
H2		18.3	18.7
H3		2.80	3.20
G		4.80	5.20
P		3.00	3.40