PNP Transistor MCC BCX53-16-TP Plastic Encapsulated with UL 94 V0 Flammability Rating and Collector Current 1 Amp
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Product Description
Product Overview
The BCX53, BCX53-10, and BCX53-16 are PNP plastic encapsulated transistors designed for general-purpose applications. They offer reliable performance with key features such as a collector current of -1.0 A and a collector power dissipation of 500 mW. These transistors are Halogen Free available upon request, Moisture Sensitivity Level 1, and meet UL 94 V-0 flammability rating. They are lead-free and RoHS compliant.
Product Attributes
- Brand: MCCSEMI
- Material: Plastic Encapsulate
- Certifications: UL 94 V-0 Flammability Rating, RoHS Compliant
- Features: Halogen Free Available Upon Request, Moisture Sensitivity Level 1
Technical Specifications
| Parameter | Symbol | BCX53 | BCX53-10 | BCX53-16 | Unit | Conditions |
| Collector Current | IC | -1.0 | A | |||
| Collector Power Dissipation | PC | 500 | mW(Note1) | Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. | ||
| 950 | mW(Note2) | Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. | ||||
| 1350 | mW(Note3) | Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. | ||||
| Collector-Emitter Voltage | VCEO | -80 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector-Base Voltage | VCBO | -100 | V | |||
| Operating Junction Temperature Range | -55 to +150 | |||||
| Storage Temperature Range | -55 to +150 | |||||
| Thermal Resistance | 250 | /W | Junction to Ambient | |||
| Emitter-Base Cutoff Current | IEBO | -0.1 | A | VEB=-5V, IC=0 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -0.5 | V | IC=-500mA, IB=-50mA (Note4) | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.5 | V | IC=-500mA, IB=-50mA (Note4) | ||
| DC Current Gain | hFE1 | 63 | 100 | 160 | VCE=-2V, IC=-5mA (Note4) | |
| DC Current Gain | hFE2 | 63 | 100 | 160 | VCE=-2V, IC=-150mA (Note4) | |
| DC Current Gain | hFE3 | 250 | 250 | 250 | VCE=-2V, IC=-500mA (Note4) | |
| Collector Cutoff Current | ICBO | -0.1 | A | VCB=-30V, IE=0 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IE=-100A, IC=0 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -80 | V | IC=-10mA, IB=0 (Note4) | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | -100 | V | IC=-100A, IE=0 | ||
| Transition Frequency | fT | 50 | 50 | 50 | MHz | VCE= - 2V, IC=-5mA, f=100MHz |
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Sellina