PNP Plastic Encapsulated Transistor MCC BC857S TP with Halogen Free Green Device and RoHS Compliance

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Product Description

Product Overview

The BC857S is a PNP Plastic-Encapsulated Transistor designed for various electronic applications. It features an internal multi-chip structure and is Halogen Free, designated as a "Green" Device. This transistor meets UL 94 V-0 flammability rating and is RoHS compliant. It is suitable for applications requiring high reliability and adherence to environmental standards.

Product Attributes

Brand: MCCSEMI
Marking: 3C
Certifications: UL 94 V-0 Flammability Rating, RoHS Compliant
Environmental: Halogen Free ("Green" Device), Moisture Sensitivity Level 1

Technical Specifications

Parameter	Symbol	Rating	Unit	Conditions
Operating Junction Temperature Range		-55 to +150
Storage Temperature Range		-55 to +150
Collector Current	IC	-200	mA
Collector Power Dissipation	PC	300	mW
Collector-Emitter Voltage	VCEO	-45	V
Emitter-Base Voltage	VEBO	-5	V
Collector-Base Voltage	VCBO	-50	V
Collector-Base Cutoff Current	ICBO	-15	nA	VCB=-30V, IE=0
Emitter-Base Breakdown Voltage	V(BR)EBO	-5	V	IE=-10A, IC=0
Collector-Emitter Breakdown Voltage	V(BR)CEO	-45	V	IC=-10A, IE=0
Collector-Base Breakdown Voltage	V(BR)CBO	-50	V	IC=-10mA, IB=0
DC Current Gain	hFE	125 - 630		VCE=-5V, IC=-2mA
Transition Frequency	fT	200	MHz	VCE=-5V, IC=-2mA, f=100MHz
Collector-Emitter Saturation Voltage	VCE(sat)	-0.6 to -0.75	V	VCE=-5V, IC=-10mA
Collector Output Capacitance	Cob	3.5	pF	VCB=-10V, IE=0, f=1MHz
Noise Figure	NF	2.5	dB	VCE=-5V, IC=-0.2mA, f=1KHz RS=2K, BW=200Hz
Base-Emitter Voltage	VBE	-0.82	V	IC=-100mA, IB=-5mA
Base-Emitter Voltage	VBE	-0.65	V	IC=-10mA, IB=-0.5mA
Thermal Resistance		417	/W	Junction to Ambient