RoHS Compliant MCC BCX56-16-TP NPN Plastic Encapsulated Transistor with UL 94 V0 Flammability Rating
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Delivery Time:
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Product Description
Product Overview
The BCX56 series are NPN plastic encapsulated transistors designed for various electronic applications. They offer features such as Halogen Free availability, Moisture Sensitivity Level 1, and compliance with UL 94 V-0 flammability rating. These transistors are RoHS compliant.
Product Attributes
- Brand: MCCSEMI
- Material: Plastic Encapsulate
- Certifications: RoHS Compliant, UL 94 V-0 Flammability Rating
- Availability: Halogen Free Available Upon Request (add "-HF" suffix)
Technical Specifications
| Parameter | Symbol | BCX56 | BCX56-10 | BCX56-16 | Unit | Conditions |
| Collector-Base Voltage | VCBO | 100 | V | |||
| Collector-Emitter Voltage | VCEO | 80 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current | IC | 1.0 | A | |||
| Base Current | IB | 0.1 | A | |||
| Peak Base Current (tp<1ms) | IBM | 0.2 | A | |||
| Collector Power Dissipation (Note 1) | PC | 0.50 | W | Device mounted on an FR4 PCB, Single-sided copper, tin-plated and standard footprint. | ||
| Collector Power Dissipation (Note 2) | PC | 0.95 | W | Device mounted on an FR4 PCB, Single-sided copper, mounting pad for collector 1cm2 | ||
| Collector Power Dissipation (Note 3) | PC | 1.35 | W | Device mounted on an FR4 PCB, Single-sided copper, mounting pad for collector 6cm2 | ||
| Operating Junction Temperature Range | -55 to +150 | |||||
| Storage Temperature Range | -55 to +150 | |||||
| Thermal Resistance (Junction to Ambient, Note 1) | 250 | /W | ||||
| Collector-Base Cutoff Current | ICBO | 0.1 | A | VCB=30V, IE=0 | ||
| Emitter-Base Cutoff Current | IEBO | 0.1 | A | VEB=5.0V, IC=0 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 80 | V | IC=10mA, IB=0 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 100 | V | IC=100A, IE=0 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | V | IE=10A, IC=0 | ||
| DC Current Gain hFE(1) | 63-250 | 63-160 | 100-250 | VCE=2.0V, IC=150mA | ||
| DC Current Gain hFE(2) | 40 | VCE=2.0V, IC=5mA | ||||
| DC Current Gain hFE(3) | 25 | VCE=2.0V, IC=500mA | ||||
| Base-Emitter Voltage | VBE | 1.0 | V | IC=500mA, IB=50mA | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.5 | V | VCE=2.0V, IC=500mA | ||
| Transition Frequency | fT | 130 | MHz | VCE=5.0V, IC=10mA, f=100MHz | ||
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