Plastic encapsulated NPN transistor MDD Microdiode Semiconductor S9013-E with high collector current

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Product Description

Product Overview

The S9013-E is an NPN plastic-encapsulated transistor in a SOT-23 package. It features high collector current, complementary to the S9012, and excellent hFE linearity. This transistor is suitable for various electronic applications.

Product Attributes

Brand: Microdiode
Package Type: SOT-23
Transistor Type: NPN
Complementary To: S9012
Marking: J3

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				40	V
Collector-Emitter Voltage	VCEO				25	V
Emitter-Base Voltage	VEBO				5	V
Collector Current-Continuous	IC				0.5	A
Collector Power Dissipation	PC	Ta=25			0.3	W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
Collector-Base Breakdown Voltage	V(BR)CBO	IC=100A, IE=0			40	V
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC=1mA, IB=0			25	V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE=100A, IC=0			5	V
Collector Cut-off Current	ICBO	VCB=40V, IE=0			0.1	A
Emitter Cut-off Current	IEBO	VEB=5V, IC=0			0.1	A
DC Current Gain	hFE	VCE=1V, IC=50mA	120		400
		Rank L	120		200
		Rank H	200		350
Collector-Emitter Saturation Voltage	VCE(sat)	IC=500mA, IB=50mA			0.8	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=500mA, IB=50mA			1.4	V
Transition Frequency	fT	VCE=6V, IC=20mA, f=30MHz		150		MHz
Collector Cut-off Current	ICEO	VCB=20V, IE=0			0.1	A
Thermal Resistance	RJA	Junction To Ambient			416	/W
Collector Output Capacitance	Cob	VCB=6V, IE=0, f=1MHz			8	pF
Base-Emitter Voltage	VBE	VCB=1V, IC=10mA		0.7		V