MDD Microdiode Semiconductor S9013 NPN Transistor Featuring Excellent hFE Linearity in SOT23 Package

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The S9013 is an NPN transistor in a SOT-23 plastic-encapsulated package. It features high collector current, complementary characteristics to the S9012, and excellent hFE linearity. This transistor is suitable for various electronic applications requiring amplification and switching.

Product Attributes

Brand: Microdiode (implied by URL)
Package Type: SOT-23

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				40	V
Collector-Emitter Voltage	VCEO				25	V
Emitter-Base Voltage	VEBO				5	V
Collector Current-Continuous	IC				0.5	A
Collector Power Dissipation	PC				0.3	W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
Collector-base breakdown voltage	V(BR)CBO	IC=100A, IE=0			40	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA,IB=0			25	V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A,IC=0			5	V
Collector cut-off current	ICBO	VCB=40V, IE=0			0.1	A
Emitter cut-off current	IEBO	VEB=5V, IC=0			0.1	A
DC current gain	hFE	VCE=1V, IC=50mA	120		400
		Rank L	120	200
		Rank H	200	350
Rank J	300	400
Collector-emitter saturation voltage	VCE(sat)	IC=500mA, IB=50mA			0.6	V
Base-emitter saturation voltage	VBE(sat)	IC=500mA, IB=50mA			1.2	V
Transition frequency	fT	VCE=6V, IC=20mA f=30MHz		150		MHz
Collector output capacitance	Cob	VCB=6V, IE=0 f=1MHz		8		pF
Base-emitter voltage	VBE	VCB=1V, IC=10mA		0.7		V
Collector cut-off current	ICEO	VCB=20V, IE=0			0.1	A
Thermal Resistance	RJA			416		/W