MDD Microdiode Semiconductor MMBT3904-1AM RANGE 100-300 NPN Transistor Compact SOT-23 Package Design

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Product Description

MMBT3904 Transistor (NPN)

The MMBT3904 is a general-purpose NPN transistor in a SOT-23 package, suitable for a wide range of electronic applications. Its epitaxial planar die construction ensures reliable performance. The complementary PNP type, MMBT3906, is also recommended for complementary circuit designs.

Product Attributes

Brand: Microdiode
Package: SOT-23
Construction: Epitaxial Planar Die

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				60	V
Collector-Emitter Voltage	VCEO				40	V
Emitter-Base Voltage	VEBO				6	V
Collector Current	IC				200	mA
Collector Power Dissipation	PC	(Ta=25 unless otherwise noted)			200	mW
Thermal Resistance Junction To Ambient	RJA				625	/W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
Collector-base breakdown voltage	V(BR)CBO	IC=10A, IE=0	60			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0	40			V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A, IC=0	6			V
Collector cut-off current	ICEX	CE V =30V, VEB(off)=3V			50	nA
Collector cut-off current	ICBO	CB V = 60V, IE=0			100	nA
Emitter cut-off current	IEBO	EB V =5V, IC=0			100	nA
DC current gain	hFE	VCE=1V, IC=10mA	100
DC current gain	hFE	VCE=1V, IC=50mA		100
DC current gain	hFE	VCE=1V, IC=100mA			300
Collector-emitter saturation voltage	VCE(sat)	IC=50mA, IB=5mA			0.3	V
Base-emitter saturation voltage	VBE(sat)	IC=50mA, IB=5mA		0.95		V
Transition frequency	fT	CE V =20V,IC=10mA, f=100MHz			300	MHz
Delay time	td	VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA			35	ns
Rise time	tr	VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA			35	ns
Storage time	ts	CC V =3V, IC=10mA, IB1= IB2=1mA			200	ns
Fall time	tf	CC V =3V, IC=10mA, IB1= IB2=1mA			50	ns