MDD Microdiode Semiconductor MMBT2222A transistor NPN type for versatile electronic applications

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Product Description

Product Overview

The MMBT2222A is an NPN epitaxial planar die construction transistor designed for general-purpose applications. It offers complementary PNP type availability with the MMBT2907A.

Product Attributes

Brand: Microdiode
Model: MMBT2222A
Package Type: SOT-23
Transistor Type: NPN
Complementary PNP Type: MMBT2907A

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Breakdown Voltage	V(BR)CBO	IC = 10A, IE=0	75			V
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC = 10mA, IB=0	40			V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE =10A, IC=0			6	V
Collector Cut-off Current	ICBO	VCB =60V, IE=0			0.01	A
Collector Cut-off Current	ICEX	VCE =30V,VBE(off)=3V			0.01	A
Emitter Cut-off Current	IEBO	VEB = 3V, IC=0			0.1	A
DC Current Gain (hFE)	hFE(1)	VCE =10V, IC= 150mA	100		300
DC Current Gain (hFE)	hFE(2)	VCE =10V, IC= 0.1mA	40
DC Current Gain (hFE)	hFE(3)	VCE =10V, IC= 500mA	42
Collector-Emitter Saturation Voltage	VCE(sat)	IC=500 mA, IB= 50mA		0.3	1	V
Collector-Emitter Saturation Voltage	VCE(sat)	IC=150 mA, IB=15mA		0.2	0.3	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=500 mA, IB= 50mA		1.2	2.0	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=150 mA, IB=15mA		0.95	1.2	V
Transition Frequency	fT	VCE=20V, IC= 20mA, f=100MHz	300			MHz
Delay Time	td	VCC=30V, V BE(off)=-0.5V IC=150mA , IB1= 15mA		10		ns
Rise Time	tr	VCC=30V, V BE(off)=-0.5V IC=150mA , IB1= 15mA		25		ns
Storage Time	tS	VCC=30V, IC =150mA IB1=-IB2=15mA		60		ns
Fall Time	tf	VCC=30V, IC =150mA IB1=-IB2=15mA		225		ns
Collector Power Dissipation	PC	Ta=25			300	mW
Thermal Resistance Junction To Ambient	RJA			417		/W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150