MDD Microdiode Semiconductor S9015 SOT23 PNP Transistor for Switching and Amplification Applications

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Product Description

S9015 Transistor (PNP)

The S9015 is a PNP bipolar junction transistor (BJT) housed in a SOT-23 package. It is designed for general-purpose amplification and switching applications. Its complementary type is the S9014 NPN transistor.

Product Attributes

Brand: Microdiode
Package Type: SOT-23
Transistor Type: PNP
Complementary To: S9014

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Maximum Ratings
Collector-Base Voltage	VCBO				-50	V
Collector-Emitter Voltage	VCEO				-45	V
Emitter-Base Voltage	VEBO				-5	V
Collector Current-Continuous	IC				-100	mA
Collector Power Dissipation	PC	(Ta=25)			200	mW
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
Electrical Characteristics
Collector-base breakdown voltage	V(BR)CBO	IC=-100A, IE=0	-50			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-0.1mA,IB=0	-45			V
Emitter-base breakdown voltage	V(BR)EBO	IE=-100A,IC=0	-5			V
Collector cut-off current	ICBO	VCB=-50V, IE=0			-0.1	A
Emitter cut-off current	IEBO	VEB=-5V, IC=0			-0.1	A
DC current gain	hFE	VCE=-5V, IC=-1mA	200		1000
Collector-emitter saturation voltage	VCE(sat)	IC=-100mA, IB=-10mA			-0.3	V
Base-emitter saturation voltage	VBE(sat)	IC=-100mA, IB=-10mA			-1	V
Transition frequency	fT	VCE=-5V, IC=-10mA, f=30MHz		150		MHz
Thermal Resistance From Junction To Ambient	RJA				625	/W