Microdiode Semiconductor BC848A SOT23 NPN Transistor Designed for Switching and Audio Frequency Amplifier

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Product Description

BC846, 847, 848 SOT-23 Plastic-Encapsulate Transistor

The BC846, BC847, and BC848 are NPN transistors in a SOT-23 package, ideally suited for automatic insertion. They are designed for switching and AF amplifier applications.

Product Attributes

Brand: Microdiode
Package Type: SOT-23

Technical Specifications

Model	Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
BC846	Collector-Base Voltage	VCBO	IE=0			80	V
	Collector-Emitter Voltage	VCEO	IB=0			65	V
	Emitter-Base Voltage	VEBO	IC=0			6	V
	Collector Current (Continuous)	IC					0.1	A
	Collector Power Dissipation	PC*	Ta=25			200	mW
	Junction Temperature	TJ					150
	Storage Temperature	Tstg		-65		150
	Collector-Base Breakdown Voltage	VCBO	IC=10A, IE=0	80			V
	Collector-Emitter Breakdown Voltage	VCEO	IC=10mA, IB=0	65			V
	Collector Cut-off Current	ICBO	VCB=70V, IE=0			0.1	A
BC847	Collector-Base Voltage	VCBO	IE=0			50	V
	Collector-Emitter Voltage	VCEO	IB=0			45	V
	Emitter-Base Voltage	VEBO	IC=0			6	V
	Collector Current (Continuous)	IC					0.1	A
	Collector Power Dissipation	PC*	Ta=25			200	mW
	Junction Temperature	TJ					150
	Storage Temperature	Tstg		-65		150
	Collector-Base Breakdown Voltage	VCBO	IC=10A, IE=0	50			V
	Collector-Emitter Breakdown Voltage	VCEO	IC=10mA, IB=0	45			V
	Collector Cut-off Current	ICBO	VCB=50V, IE=0			0.1	A
BC848	Collector-Base Voltage	VCBO	IE=0			30	V
	Collector-Emitter Voltage	VCEO	IB=0			30	V
	Emitter-Base Voltage	VEBO	IC=0			6	V
	Collector Current (Continuous)	IC					0.1	A
	Collector Power Dissipation	PC*	Ta=25			200	mW
	Junction Temperature	TJ					150
	Storage Temperature	Tstg		-65		150
	Collector-Base Breakdown Voltage	VCBO	IC=10A, IE=0	30			V
	Collector-Emitter Breakdown Voltage	VCEO	IC=10mA, IB=0	30			V
	Collector Cut-off Current	ICBO	VCB=30V, IE=0			0.1	A
All Models	Emitter Cut-off Current	IEBO	VEB=5V, IC=0			0.1	A
	DC Current Gain	hFE	VCE=5V, IC=2mA	BC846A/847A/848A: 110-200; BC846B/847B/848B: 220-450; BC846C/847C/848C: 420-800
	Collector-Emitter Saturation Voltage	VCE(sat)	IC=100mA, IB=5mA			0.5	V
	Base-Emitter Saturation Voltage	VBE(sat)	IC=100mA, IB=5mA			1.1	V
	Transition Frequency	fT	VCE=5V, IC=10mA, f=100MHz	100			MHz
	Collector Output Capacitance	Cob	VCB=10V, f=1MHz			4.5	pF