MDD Microdiode Semiconductor D882 NPN transistor designed for general purpose in SOT89 3L package

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Product Description

Product Overview

The D882 is an NPN transistor in a SOT-89-3L package, designed for general-purpose applications. It offers power dissipation capabilities and is suitable for various electronic circuits.

Product Attributes

Brand: microdiode.com
Package Type: SOT-89-3L

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Maximum Ratings
Collector-Base Voltage	VCBO				40	V
Collector-Emitter Voltage	VCEO				30	V
Emitter-Base Voltage	VEBO				6	V
Collector Current-Continuous	IC				3	A
Collector Power Dissipation	PC	(Ta=25 unless otherwise noted)			0.5	W
Thermal Resistance Junction To Ambient	RJA				250	/W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
Electrical Characteristics
Collector-base breakdown voltage	V(BR)CBO	IC=100A, IE=0			40	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=10mA,IB=0			30	V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A,IC=0			6	V
Collector cut-off current	ICBO	VCB=40V, IE=0			1	A
Emitter cut-off current	IEBO	VEB=6V, IC=0			1	A
Collector cut-off current	ICEO	VCE=30V, IB=0			10	A
DC current gain	hFE(1)	VCE=2V, IB=0.2A	30		400
DC current gain	hFE(2)	VCE=2V, IC=1A	60
Collector-emitter saturation voltage	VCE(sat)	IC=2A, IB=0.2A		0.5		V
Base-emitter saturation voltage	VBE(sat)	IC=2A, IB=0.2A		1.5		V
Transition frequency	fT	VCE=5V, IC=0.1A, f=10MHz		50		MHz
Collector output capacitance	Cob	VCB=10V, IE=0, f=1MHz			45	pF
hFE Rank Classification
Rank	Range		Min	Typ	Max	Unit
R	60-120		60		120
O	100-200		100		200
Y	160-320		160		320
GR	200-400		200		400