Power MOSFET Minos MP13N50 with 60 Watts Total Dissipation and 175 Degree Maximum Operating Temperature
Price:
Negotiable
MOQ:
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Delivery Time:
Negotiable
Product Description
Product Overview
The MP13N50PF is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to achieve excellent RDS(ON). It is suitable for a wide variety of power switching applications, including adapters and chargers.
Product Attributes
- Version: A01
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-to-Source Breakdown Voltage | 500 | V | |||
| ID | Drain Current (continuous) | at Tc=25 | 13 | A | ||
| IDM | Drain Current (pulsed) | 52 | A | |||
| VGS | Gate to Source Voltage | +/-30 | V | |||
| Ptot | Total Dissipation | at Tc=25 | 60 | W | ||
| Tj Max. | Operating Junction Temperature | 175 | ||||
| EAS | Single Pulse Avalanche Energy | 1000 | mJ | |||
| Electrical Parameters | ||||||
| VDS | Drain-source Voltage | VGS=0V, ID=250A | 500 | V | ||
| RDS(on) | Static Drain-to-Source on-Resistance | VGS=10V, ID=6.5A | 0.34 | 0.50 | ||
| VGS(th) | Gated Threshold Voltage | VDS=VGS, ID=250A | 2.0 | 3.1 | 4.0 | V |
| IDSS | Drain to Source leakage Current | VDS=500V, VGS= 0V | 1.0 | A | ||
| IGSS(F) | Gated Body Foward Leakage | VGS= +30V | 100 | nA | ||
| IGSS(R) | Gated Body Reverse Leakage | VGS= -30V | -100 | nA | ||
| Ciss | Input Capacitance | VGS=0V, VDS=25V, f=1.0MHZ | 2315 | pF | ||
| Coss | Output Capacitance | 190 | pF | |||
| Crss | Reverse Transfer Capacitance | 11 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-on Delay Time | VDD=250V,ID=13A, RG=10 | 28 | nS | ||
| tr | Turn-on Rise Time | 21 | nS | |||
| td(off) | Turn-off Delay Time | 62 | nS | |||
| tf | Turn-off Fall Time | 32 | nS | |||
| Qg | Total Gate Charge | VDS=400V ID=13A VGS=10V | 40 | nC | ||
| Qgs | Gate-Source Charge | 9.2 | nC | |||
| Qgd | Gate-Drain Charge | 14 | nC | |||
| Source-Drain Diode Characteristics | ||||||
| ISD | S-D Current(Body Diode) | 13 | A | |||
| ISDM | Pulsed S-D Current(Body Diode) | 52 | A | |||
| VSD | Diode Forward Voltage | VGS=0V, IDS=13A | 1.5 | V | ||
| trr | Reverse Recovery Time | TJ=25,IF=13A di/dt=100A/us | 555 | nS | ||
| Qrr | Reverse Recovery Charge | 4550 | C | |||
| Thermal Characteristics | ||||||
| RJC | Junction-to-Case | 2.5 | /W | |||
Package Information
TO-220EW PACKAGE
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina