Switching and amplification transistor MDD Microdiode Semiconductor MMBT5401 PNP type in SOT23 package

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Product Description

Product Overview

The MMBT5401 is a PNP bipolar transistor in a SOT-23 plastic-encapsulated package. It is complementary to the MMBT5551 and is ideal for medium power amplification and switching applications.

Product Attributes

Brand: Microdiode
Package: SOT-23

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				-160	V
Collector-Emitter Voltage	VCEO				-160	V
Emitter-Base Voltage	VEBO				-5	V
Collector Current	IC				-0.6	A
Collector Power Dissipation	PC	(Ta=25)			0.3	W
Thermal Resistance Junction To Ambient	RJA			416		/W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
Collector-base breakdown voltage	V(BR)CBO	IC =-100A, IE=0	-160			V
Collector-emitter breakdown voltage	V(BR)CEO	IC =-1mA, IB=0	-150			V
Emitter-base breakdown voltage	V(BR)EBO	EI =-10A, IC=0	-5			V
Collector cut-off current	ICBO	CB V =-120V, IE=0			-0.1	uA
Emitter cut-off current	IEBO	EB V =-4V, IC=0			-0.1	uA
DC current gain	hFE	VCE=-5V, IC=-1mA	80
		VCE=-5V, IC=-10mA		100	300
		VCE=-5V, IC=-50mA
Collector-emitter saturation voltage	VCE(sat)	IC=-10mA, IB=-1mA		-0.2	-0.5	V
Collector-emitter saturation voltage	VCE(sat)	IC=-50mA, IB=-5mA		-1	-1	V
Base-emitter saturation voltage	VBE(sat)	IC=-10mA, IB=-1mA		-0.7	-0.95	V
Base-emitter saturation voltage	VBE(sat)	IC=-50mA, IB=-5mA		-0.8	-1	V
Transition frequency	fT	CE V =-5V,IC=-10mA, f=30MHz		100		MHz