Electronic switching transistor MDD Microdiode Semiconductor S9014 NPN type in compact SOT23 package

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Product Description

Product Overview

The S9014 is a general-purpose NPN transistor in a SOT-23 plastic package. It is complementary to the S9015 and is suitable for various electronic applications requiring amplification or switching.

Product Attributes

Brand: Microdiode
Package Type: SOT-23
Marking: J6

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
MAXIMUM RATINGS
Collector-Base Voltage	VCBO				50	V
Collector-Emitter Voltage	VCEO				45	V
Emitter-Base Voltage	VEBO				5	V
Collector Current-Continuous	IC				100	mA
Collector Power Dissipation	PC	(Ta=25 unless otherwise noted)			200	mW
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
ELECTRICAL CHARACTERISTICS (Ta= 25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC=100A, IE=0			50	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA,IB=0			45	V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A,IC=0			5	V
Collector cut-off current	ICBO	VCB=50V, IE=0			0.1	A
Emitter cut-off current	IEBO	VEB=3V, IC=0			0.1	A
DC current gain	hFE	VCE=5V, IC=1mA	200		1000
DC current gain	hFE	IC=100mA, IB=5mA
Collector-emitter saturation voltage	VCE(sat)	IC=100mA, IB=5mA			0.3	V
Base-emitter saturation voltage	VBE(sat)	IC=100mA, IB=5mA			1	V
Transition frequency	fT	VCE=5V, IC=10mA		150		MHz
Transition frequency	fT	f=30MHz
Collector cut-off current	ICEO	VCE=35V, IB=0			1	A
Thermal Resistance	RJA	From Junction To Ambient		625		/W
hFE CLASSIFICATION
Rank	L	Range	200-450
Rank	H	Range	450-1000