MDD Microdiode Semiconductor MMDT3946 dual transistor complementary pair NPN and PNP in SOT-363 package

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Product Description

Product Overview

The MMDT3946 is a DUAL TRANSISTOR (NPN+PNP) in a SOT-363 package. It features a complementary pair of epitaxial planar die construction, making it ideal for low power amplification and switching applications. This device integrates one 3904 (NPN) and one 3906 (PNP) transistor.

Product Attributes

Brand: Microdiode
Product Code: MMDT3946
Package Type: SOT-363
Construction: Epitaxial Planar Die
Features: Complementary Pair

Technical Specifications

nA nA nA nA nA V V V V V V pF pF dB dB

Parameter	Symbol	TR1 (NPN) 3904 Conditions	Min	Typ	Max	Unit	TR2 (PNP) 3906 Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				60	V				-40	V
Collector-Emitter Voltage	VCEO				40	V				-40	V
Emitter-Base Voltage	VEBO				5	V				-5	V
Collector Current	IC				200	mA				-200	mA
Collector Power Dissipation	PC				200	mW				200	mW
Thermal Resistance (Junction to Ambient)	RJA				625	/W				625	/W
Junction Temperature	Tj				150					150
Storage Temperature	Tstg		-55		+150			-55		+150
Collector-base breakdown voltage	V(BR)CBO	IC=10A, IE=0	60			V	IC=-10A, IE=0	-40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0	40			V	IC=-1mA, IB=0	-40			V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A, IC=0	5			V	IE=-10A, IC=0	-5			V
Collector cut-off current	ICEO	VCE=30V, IB=0			500
Collector cut-off current	ICBO	VCB=30V, IE=0				VCB=-30V, IE=0
Emitter cut-off current	IEBO	VEB=5V, IC=0			50	VEB=-5V, IC=0			-50
DC current gain	hFE	VCE=1V, IC=0.1mA	40	70	100		VCE=-1V, IC=-0.1mA	60	80	100
DC current gain	hFE	VCE=1V, IC=1mA					VCE=-1V, IC=-1mA
DC current gain	hFE	VCE=1V, IC=10mA					VCE=-1V, IC=-10mA
DC current gain	hFE	VCE=1V, IC=50mA					VCE=-1V, IC=-50mA
DC current gain	hFE	VCE=1V, IC=100mA					VCE=-1V, IC=-100mA
Collector-emitter saturation voltage	VCE(sat)	IC=10mA, IB=1mA		0.2		IC=-10mA, IB=-1mA		-0.25
Collector-emitter saturation voltage	VCE(sat)	IC=50mA, IB=5mA		0.3		IC=-50mA, IB=-5mA		-0.40
Base-emitter saturation voltage	VBE(sat)	IC=50mA, IB=5mA		0.95		IC=-50mA, IB=-5mA		-0.95
Transition frequency	fT	VCE=20V,IC=20mA, f=100MHz		300		MHz	VCE=-20V, IC=-10mA, f=100MHz		250		MHz
Delay time	td	VCC=3V, VBE(off)=0.5V IC=10mA, IB1=1mA		35		ns	VCC=-3V, VBE(off)=-0.5V IC=10mA, IB1=-1mA		35		ns
Rise time	tr	VCC=3V, VBE(off)=0.5V IC=10mA, IB1=1mA		35		ns	VCC=-3V, VBE(off)=-0.5V IC=10mA, IB1=-1mA		35		ns
Storage time	ts	VCC=3V, IC=10mA, IB1= IB2=1mA		200		ns	VCC=-3V, IC=-10mA, IB1= IB2=-1mA		225		ns
Fall time	tf	VCC=3V, IC=10mA, IB1= IB2=1mA		50		ns	VCC=-3V, IC=-10mA, IB1= IB2=-1mA		75		ns
Collector output capacitance	Cob	VCB=5V, IE=0, f=1MHz			4	VCB=-5V, IE=0, f=1MHz			4.5
Noise figure	NF	VCE=5V, IC=0.1mA, f=1KHz, Rg=1K,f=200MHz			5	VCE=-5V, IC=-0.1mA, f=1KHz, Rg=1K,f=200MHz			4.0