PNP transistor MDD Microdiode Semiconductor B772 in SOT89 3L package for general electronic circuits

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Product Description

Product Overview

The B772 is a PNP transistor in a SOT-89-3L package, designed for general-purpose applications. It offers power dissipation capabilities and is suitable for various electronic circuits.

Product Attributes

Brand: Microdiode (implied by URL)
Package: SOT-89-3L

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
MAXIMUM RATINGS
Collector-Base Voltage	VCBO				-40	V
Collector-Emitter Voltage	VCEO				-30	V
Emitter-Base Voltage	VEBO				-6	V
Collector Current-Continuous	IC				-3	A
Collector Power Dissipation	PC	Ta=25			0.5	W
Thermal Resistance From Junction To Ambient	RJA			250		/W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
ELECTRICAL CHARACTERISTICS
Collector-base breakdown voltage	V(BR)CBO	IC=-100A, IE=0			-40	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-10mA,IB=0			-30	V
Emitter-base breakdown voltage	V(BR)EBO	IE=-100A,IC=0			-6	V
Collector cut-off current	ICBO	VCB=-40V, IE=0			-1	A
Emitter cut-off current	IEBO	VEB=-6V, IC=0			-1	A
Collector cut-off current	ICEO	VCE=-30V, IB=0			-10	A
DC current gain	hFE(1)	VCE=-2V, IB=-0.2A	30		400
DC current gain	hFE(2)	VCE=-2V, IC=-1A		60
Collector-emitter saturation voltage	VCE(sat)	IC=-2A, IB=-0.2A			-0.5	V
Base-emitter saturation voltage	VBE(sat)	IC=-2A, IB=-0.2A			-1.5	V
Transition frequency	fT	VCE=-5V, IC=-0.1A		50		MHz
Collector output capacitance	Cob	VCB=-10V, IE=0 , f=1MHz			55	pF
hFE RANK CLASSIFICATION
Rank	Range	Min	Typ	Max	Unit
GR	60-120	60		120
RO	100-200	100		200
Y	160-320	160		320
220	200-400	200		400