MIRACLE POWER MJF28N70 Featuring Low On Resistance and 700V Voltage Rating for Power Supply Solutions
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Product Description
Product Overview
The MJF28N70 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed with advanced Super Junction technology for easy gate switching control. It offers robust performance with a 700V breakdown voltage and a continuous drain current of 28A, featuring a low typical on-resistance of 135m at VGS = 10V. This MOSFET is 100% avalanche tested and is suitable for applications such as PC power supplies, PD adaptors, LCD & PDP TVs, LED lighting, and single-ended flyback or two-transistor forward topologies.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: N-Channel Power MOSFET
- Model: MJF28N70
- Technology: Advanced Super Junction Technology
- Testing: 100% Avalanche Tested
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 700 | V | |||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous, TC = 25C | 28 | A | |||
| IDM | Drain Current-Pulsed | 84 | A | |||
| PD | Maximum Power Dissipation, TC = 25C | 34 | W | |||
| dv/dt | Peak Diode Recovery dv/dt | 15 | V/ns | |||
| EAS | Single Pulsed Avalanche Energy | 500 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 to 150 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 3.65 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 80 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 705 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 700, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.8 | - | 4.2 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 10A | - | 135 | 150 | m |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | f = 1.0MHz | - | 5.5 | - | |
| Ciss | Input Capacitance | VDS = 50V, VGS = 0V, f = 10kHz | - | 2389 | - | pF |
| Coss | Output Capacitance | - | 218 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 5.07 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400V, VGS = 13V, ID = 11.3A, RG = 1.7 | - | 12.4 | - | ns |
| tr | Turn-On Rise Time | - | 21.6 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 50 | - | ns | |
| tf | Turn-Off Fall Time | - | 18.4 | - | ns | |
| Qg | Total Gate Charge | VDD = 400V, VGS = 0 to 10V, ID = 11.3A | - | 47.59 | - | nC |
| Qgs | Gate-Source Charge | - | 8.52 | - | nC | |
| Qgd | Gate-Drain Charge | - | 8.30 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IF = 1A | - | 0.71 | - | V |
| Trr | Body Diode Reverse Recovery Time | VR = 400V, IF = 11.3A, dIF/dt = 100A/s | - | 288 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | VR = 400V, IF = 11.3A, dIF/dt = 100A/s | - | 4.3 | - | C |
| Irrm | Peak reverse recovery current | VR = 400V, IF = 11.3A, dIF/dt = 100A/s | - | 26.2 | - | A |
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Sellina