Load Switch and PWM Application MOSFET MIRACLE POWER MU3020D with Halogen Free RoHS Compliant Design
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Product Description
Product Overview
The MU3020D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features 30V drain-source voltage and 190A continuous drain current with a typical RDS(on) of 1.9m at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, making it suitable for load switch, PWM, and power management applications. It is halogen-free and RoHS-compliant, with 100% EAS guaranteed.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: N-Channel Enhancement Mode MOSFET
- Compliance: Halogen-free; RoHS-compliant
- Testing: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | TC = 25C unless otherwise noted | - | - | 30 | V |
| VGS | Gate-Source Voltage | TC = 25C unless otherwise noted | - | - | 20 | V |
| ID | Drain Current-Continuous | TC = 25C | - | - | 190 | A |
| ID | Drain Current-Continuous | TC = 100C | - | - | 120 | A |
| IDM | Drain Current-Pulsed | - | - | - | 760 | A |
| PD | Maximum Power Dissipation | TC = 25C | - | - | 50 | W |
| EAS | Single Pulsed Avalanche Energy | - | - | - | 625 | mJ |
| TJ, TSTG | Operating and Store Temperature Range | - | -55 | - | 150 | C |
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | - | - | 2.5 | - | C/W |
| RJA | Thermal Resistance, Junction to Ambient | - | - | 35 | - | C/W |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 30V, VGS = 0V | - | - | 1.0 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 1.0 | 1.5 | 2.5 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 20A | - | 1.9 | 2.4 | m |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 4.5V, ID = 10A | - | 2.4 | 3.0 | m |
| RG | Gate Resistance | VDS = VGS = 0V, f = 1.0MHz | - | 2.1 | - | |
| Ciss | Input Capacitance | VDS = 15V, VGS = 0V, f = 1.0MHz | - | 6278 | - | pF |
| Coss | Output Capacitance | - | - | 863 | - | pF |
| Crss | Reverse Transfer Capacitance | - | - | 532 | - | pF |
| td(on) | Turn-On Delay Time | VDD = 15V, VGS = 10V, ID = 30A, RGEN = 3.0 | - | 13 | - | ns |
| tr | Turn-On Rise Time | - | - | 29 | - | ns |
| td(off) | Turn-Off Delay Time | - | - | 85 | - | ns |
| tf | Turn-Off Fall Time | - | - | 50 | - | ns |
| Qg | Total Gate Charge | VDS = 15V, VGS = 0 to 10V, ID = 20A | - | 108 | - | nC |
| Qgs | Gate-Source Charge | - | - | 20 | - | - |
| Qgd | Gate-Drain Charge | - | - | 20 | - | - |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | - | - | 190 | A |
| ISM | Maximum Pulsed Current | - | - | - | 760 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 20A | - | - | 1.2 | V |
| trr | Body Diode Reverse Recovery Time | IF = 20A, dIF/dt = 100A/s | - | 28 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 20A, dIF/dt = 100A/s | - | 16 | - | nC |
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