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MCC MCQ15N10B TP N Channel Enhancement Mode Transistor Offering Low Switching Loss and Fast Recovery

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Product Description

Product Overview

The MCQ15N10B is an N-Channel Enhancement Mode Field Effect Transistor designed for applications requiring low RDS(on) and excellent switching performance. It features extremely low switching loss, fast switching speeds with soft recovery, and offers exceptional stability and uniformity. This transistor is built with an epoxy that meets UL 94 V-0 flammability rating and is Moisture Sensitivity Level 1 compliant. It is available as Halogen Free upon request by adding the "-HF" suffix and is Lead Free/RoHS Compliant. The device operates within a junction temperature range of -55C to +150C.

Product Attributes

  • Brand: MCC (Micro Commercial Components Corp.)
  • Product Type: N-Channel Enhancement Mode Field Effect Transistor
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • RoHS Compliance: Yes (indicated by "P" suffix, or "-HF" for Halogen Free)

Technical Specifications

Internal Structure:

Parameter Symbol Rating Unit Conditions
Gate-Source Voltage VGS 20 V
Drain-Source Voltage VDS 100 V
Continuous Drain Current ID 15 (TC=25C), 4 (TC=100C) A Note 2
Pulsed Drain Current IDM 64 A Note 3
Total Power Dissipation PD 1.6 W Note 4
Single Pulsed Avalanche Energy EAS 130 mJ Note 5
Operating Junction Temperature Range Tj -55 to +150 C
Storage Temperature Range Tstg -55 to +150 C
Thermal Resistance (Junction to Ambient) RJA 31 C/W Note 1

Electrical Characteristics @ 25C (Unless Otherwise Specified):

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 100 V
Gate-Source Leakage Current IGSS VDS =0V, VGS =20V 100 nA
Zero Gate Voltage Drain Current IDSS VDS =100V, VGS =0V 1 A
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250A 1 1.8 2.5 V
Drain-Source On-Resistance RDS(on) VGS=10V, ID=12A 7.7 9.5 m
Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=9A 9.2 12.5 m
Diode Forward Voltage VSD VGS=0V, IS=15A 1.3 V
Maximum Body-Diode Continuous Current IS 15 A

Dynamic Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit
Input Capacitance Ciss VDS=50V,VGS=0V,f =1MHz 3530 pF
Output Capacitance Coss VDS=50V,VGS=0V,f =1MHz 560 pF
Reverse Transfer Capacitance Crss VDS=50V,VGS=0V,f =1MHz 9 pF
Total Gate Charge Qg VDS=50V,VGS=10V,ID=10A 60.7 nC
Gate-Source Charge Qgs VDS=50V,VGS=10V,ID=10A 7.2 nC
Gate-Drain Charge Qg d VDS=50V,VGS=10V,ID=10A 14.6 nC
Reverse Recovery Chrage Qrr IF=10A, di/dt=100A/s 160 nC
Reverse Recovery Time trr IF=10A, di/dt=100A/s 67 ns
Turn-On Delay Time td(on) VGS=10V,VDD=50V,ID=10A 22.5 ns
Turn-On Rise Time tr VGS=10V,VDD=50V,ID=10A 8.6 ns
Turn-Off Delay Time td(off) VDS=50V,VGS=10V,ID=10A 66.6 ns
Turn-Off Fall Time tf VDS=50V,VGS=10V,ID=10A 42.1 ns

Dimensions (SOP-8 Package):

DIM INCHES MM
A 0.053 - 0.069 1.35 - 1.75
B 0.004 - 0.010 0.10 - 0.25
C 0.053 - 0.061 1.35 - 1.55
D 0.013 - 0.020 0.33 - 0.51
E 0.007 - 0.010 0.17 - 0.25
F 0.185 - 0.200 4.70 - 5.10
G 0.228 - 0.244 5.80 - 6.20
H 0.150 - 0.157 3.80 - 4.00
J 0.016 - 0.050 0.40 - 1.27
K 0 - 8 0 - 8

Suggested Solder Pad Layout:

Dimension Value (mm)
Pad Width (G) 1.27mm BSC
Pad Spacing (H) 3.80 - 4.00mm
Pad Length (F) 4.70 - 5.10mm
Overall Width (G) 5.80 - 6.20mm
Overall Length (F) 4.70 - 5.10mm
Pad to Pad Center (J) 3.80 - 4.00mm

Ordering Information:

Device Packing Part Number
MCQ15N10B Tape&Reel: 4Kpcs/Reel -TP

Note: Adding "-HF" Suffix for Halogen Free, e.g. Part Number-TP-HF


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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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