High Current Ultrafast Soft Recovery Rectifier MICROCHIP APT40DQ120BG for Switch Mode Power Supplies

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Product Description

Product Overview

The APT40DQ120BG is an Ultrafast Soft Recovery Rectifier Diode designed for high-frequency applications. It offers ultrafast recovery times, soft recovery characteristics, low forward voltage, and low leakage current. This AEC-Q101 qualified and RoHS compliant device enhances system reliability and power density, making it suitable for power factor correction, switch-mode power supplies, inverters/converters, motor controllers, and as anti-parallel, freewheeling, or snubber/clamp diodes.

Product Attributes

Brand: Microsemi
Certifications: AEC-Q101 qualified, RoHS compliant

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings
V_R	Maximum DC reverse voltage				1200	V
V_RRM	Maximum peak repetitive reverse voltage				1200	V
V_RWM	Maximum working peak reverse voltage				1200	V
I_F(AV)	Maximum average forward current (T_C = 112 C, duty cycle = 0.5)				40	A
I_F(RMS)	RMS forward current				63	A
I_FSM	Non-repetitive forward surge current (T_J = 45 C, 8.3 ms)				210	A
E_AVL	Avalanche energy (1 A, 40 mH)				20	mJ
T_J, T_STG	Operating and storage temperature range		55		175	C
T_L	Lead temperature for 10 seconds				300	C
Thermal and Mechanical Characteristics
R_JC	Junction-to-case thermal resistance			0.61		C/W
W_T	Package weight			0.22	oz / 5.9	g
Torque	Maximum mounting torque				10	lb-in / 1.1 N-m
Static Characteristics
V_F	Forward voltage	I_F = 30 A		2.8	3.3	V
V_F	Forward voltage	I_F = 60 A			3.4	V
V_F	Forward voltage	I_F = 30 A, T_J = 125 C		2.1		V
I_RM	Maximum reverse leakage current	V_R = 1200 V			100	A
I_RM	Maximum reverse leakage current	V_R = 1200 V, T_J = 125 C			500	A
C_J	Junction capacitance	V_R = 200 V			36	pF
Dynamic Characteristics
t_rr	Reverse recovery time	I_F = 1 A, di/dt = 100 A/s, V_R = 30 V, T_J = 25 C			26	ns
t_rr	Reverse recovery time	I_F = 40 A, di/dt = 200 A/s, V_R = 800 V, T_J = 25 C			350	ns
Q_rr	Reverse recovery charge	I_F = 40 A, di/dt = 200 A/s, V_R = 800 V, T_J = 25 C			570	nC
I_RRM	Maximum reverse recovery current	I_F = 40 A, di/dt = 200 A/s, V_R = 800 V, T_J = 25 C			4	A
t_rr	Reverse recovery time	I_F = 40 A, di/dt = 200 A/s, V_R = 800 V, T_J = 125 C			430	ns
Q_rr	Reverse recovery charge	I_F = 40 A, di/dt = 200 A/s, V_R = 800 V, T_J = 125 C			2200	nC
I_RRM	Maximum reverse recovery current	I_F = 40 A, di/dt = 200 A/s, V_R = 800 V, T_J = 125 C			9	A
t_rr	Reverse recovery time	I_F = 40 A, di/dt = 1000 A/s, V_R = 800 V, T_J = 125 C			210	ns
Q_rr	Reverse recovery charge	I_F = 40 A, di/dt = 1000 A/s, V_R = 800 V, T_J = 125 C			3400	nC
I_RRM	Maximum reverse recovery current	I_F = 40 A, di/dt = 1000 A/s, V_R = 800 V, T_J = 125 C			29	A